2SA1783 SANYO

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Ordering number: EN 3340 28A1783/29C4641 SE PNP/NPN Epitaxial Planar Silicon Transistors ae Low-Frequency eee ie ly General-Purpose Amp Applications Features ae « So : Capable of being used in the low frequency to high frequency range. fe & _ ‘ve Absolute Maximum Ratings at Ta = 25°C ff & i a unit’ Collector to Base Voltage Veso ff Np C955 ON Collector to Emitter Voltage Vcxo Pe Te See Emitter to Base Voltage VERO ff G&S pe (-)6," v Collector Current Ig ff &% (-)y50 mA Collector Current (Pulse) Igp FE gee" (31900 mA Base Current Ip a oo Ws Collector Dissipation Po fe . sy, x oe $00 mW Junction Temperature Tj if F a Wieadl ve 150 °C Storage Temperature Tstg ae i a #56to+150 °C Electrical Characteristics at Ta = 25°C of os “> etmin typ max unit Collector CutoffCurrent Icgo Vep=(4)35V 1g 20” ff (-)0.1 pA Emitter CutoffCurrent —Iggo Vep3(+)4V,Ic=0 “yf (-)0.1 pA DC Current Gain hee Vow )eyitse(—)ima “ 140% 560% Gain-Bandwidth Product fp Vég=(—)6¥lo=(-)10mA° 200 MHz Output Capacitance Cob Nee = )6V f= 1MHz ¢ 2.2 pF C-E Saturation Voltage Versa)» log(—)80MA Ip #(4 )5mA 0.08 (-)0.4 Vv B-L. Saturation Voltage —Vegigity oe =(—)50mAity=(—)5mA (-)08 (-)10 V C-B Breakdown Voltage Vegricaq, “ig =(=)10pA Fe =0 (-)55 Vv C-E Breakdown Voltage .Varceo “lc S(—)1mA;Rpe = © (—)50 Vv E-B Breakdown Voltage ,” .VinrygRQ,_ tee (10H, IO (—)6 v Turn-ON Time of tons, — YySee specified Test Circuit. 0.15 ps Storage Time oe tate "he gf 4 0.75 HS ff ap ff (0.60) Fall Time PE Sb % ff * 0.20 ps : The 25A1783/28C4641 are clagsified by ImA hye as follows : 140 $ 286 | 260 7. 400 |*a80 u 560 oe. Gs . fe Case Outline 2003A sé Se a ‘nour go ew 0.45 | aes pees P.C*20u84.VR & SA 22 = | ee Dosis. 3 Ba? of "Ll -= 2 ag Jag" vamp | Lae td Lew Vee =-5v™" Voo=20¥ . SEDEC: TO-92 B: Base Unit(Resistance : 2 , Capacitance : F) EIAS : SC-43 C: Collector 1Olu1= ~10l62=1o=10mA SANYO: NP E: Bmitter (For PNP, the polarity is reversed.) Specifications and information herein are subject to change without notice. SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg., 1-10. 1 Chame, Ueno, Taito-ku. TOKYO, 110 JAPAN 3230MO,TS No.3340-1/4

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