2SC4630LS SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Features

  • High breakdown voltage(VCEO min=900V).
  • Small Cob(typical Cob=2.8pF).
  • Full isolation package.
  • High reliability(Adoption of HVP process). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 1500 V Collector-to-Emitter Voltage V CEO 900 V Emitter-to-Base Voltage V EBO 5V Collector Current I C 100 mA Collector Current (Pulse) I CP 300 mA Collector Dissipation P C 2W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =900V, IE=0 10 µA Emitter Cutoff Current I EBO VEB =4V, IC =0 10 µA DC Current Gain h FE VCE =5V, IC =10mA 30 Gain-Bandwidth Product f T VCE =10V, IC =10mA 6 MHz Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SC4630LS 900V / 100mA High-Voltage Amplifier, High-Voltage Switching Applications Package Dimensions unit : mm 2079D [2SC4630LS]

11502 TS IM TA-3427 / 11599 HA (KT) / 91296 YK (KOTO) TA-0465

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. NPN Triple Diffused Planar Silicon Transistor 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI(LS) 16.014.0 3.6 3.5 7.2 16.1 0.7 2.55 2.55 2.4 1.20.9 0.75 0.6 1.2 4.5 2.8 123 10.0 3.2

No.3699-2/3 ITR07314 02 14 38 71 0 965 IC -- VCE ITR07313 IB =0 hFE -- IC IC -- VCE ITR07316 IC -- VBE ITR07315 120 100 100 100 Tc=120 --40 Tc=120°C --40°C 25°C 1.0 10 2723 5 7 23 5 100 02 16 5438 71 0 9 IB =0 1mA 2mA 3mA 4mA 5mA 6mA 7mA 8mA 9mA 10mA 50µA 100µA 150µA 200µA 250µA 300µA 350µA 400µA 450 µA 500 µA V CE =5V Cob -- VCB ITR07318 fT -- IC ITR07317 1.0 1.0 0.1 23 5 7 1.0 2 3 57 2 3 5710 100 V CE =10V 1.0 325 7 5 3210 f=1MHz Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- mA Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- mA Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA Collector Current, IC -- mA DC Current Gain, hFE Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- mA Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Collector-to-Emitter Saturation VoltageVCE (sat) I C =20mA, IB=4mA 5 V Base-to-Emitter Saturation Voltage V BE (sat) I C =20mA, IB=4mA 2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =1mA, IE=0 1500 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =1mA, RBE =∞ 900 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=1mA, IC =0 5 V Output Capacitance Cob V CB =100V, f=1MHz 2.8 pF Thermal Resistance Rthj-c Junction – case 12.5 °C / W

No.3699-3/3 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2002. Specifications and information herein are subject to change without notice. PS PC -- Ta 2.4 1.6 2.0 1.2 0.8 0.4 02 0 6 0 40 80 100 120 140 160 ITR07321 A S O ITR07320 10005 10072 3 5 72 VCE (sat) -- IC100 1.0 0.1 1.0 25 32 725 37 10 100 ITR07319 IC / IB =10 ≤50µs 500 µs 200 µs 100 µs 1ms 10ms ICP =300mA IC =100mA DC operation Tc= --40 120 100 0.1 Collector-to-Emitter V oltage, VCE -- V Ambient Temperature, Ta -- °C Tc=25°C Single pulse No heat sink Collector Current, IC -- mA Collector Dissipation, PC -- W Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE (sat) -- V