2SA1790 PANASONIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4626 n Features l High transition frequency fT. l SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Emitter EIAJ:SC–75 3:Collector SS–Mini Type Package Symbol V CBO V CEO V EBO IC PC Tj Tstg Ratings –30 –20 –30 125 125 –55 ~ +125 Unit V V V mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector to emitter saturation voltage Base to emitter voltage Noise figure Reverse transfer impedance Common emitter reverse transfer capacitance Symbol I CBO ICEO IEBO hFE * fT V CE(sat) V BE NF Zrb C re Conditions V CB = –10V, IE = 0 V CE = –20V , IB = 0 V EB = –5V , IC = 0 V CE = –10V , IC = 1mA V CB = –10V , IE = 1mA, f = 200MHz IC = –10mA, IB = –1mA V CE = –10V , IC = –1mA V CB = –10V , IE = 1mA, f = 5MHz V CB = –10V , IE = 1mA, f = 2MHz V CE = –10V , IC = –1mA f = 10.7MHz min 150 typ 300 – 0.1 – 0.7 2.8 1.2 max – 0.1 –100 –10 220 4.0 2.0 Unit mA mA MHz V V dB W pF *hFE Rank classification Rank B C hFE 70 ~ 140 110 ~ 220 Marking Symbol EB EC 1.6–0.15 1.6–0.1 1.0–0.10.75–0.15 0.45–0.1 0.50.3 0 to 0.1 0.5 0.8–0.1 0.40.4 0.2–0.1 Marking symbol :E

0 160 40 120 80 14020 100 60 150 125 100 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) –30 –25 –20 –15 –10 Ta=25˚C IB=–250mA –200mA –150mA –100mA –50mA Collector to emitter voltage VCE (V) Collector current IC (mA ) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 120 100 VCE =–10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE f=1MHz IE=0 Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) IC =–1mA f=10.7MHz Ta=25˚C Collector to emitter voltage VCE (V) Common emitter reverse transfer capacitance Cre (pF) 0.1 1 10 1000.3 3 30 600 500 400 300 200 100 VCB =–10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) VCE =–10V f=100MHz Ta=25˚C Collector current IC (mA ) Power gain PG (dB) 0.1 0.3 1 3 10 VCB =–10V f=100MHz Ta=25˚C Emitter current IE (mA ) Noise figure NF (dB) PC —T a I C —V CE V CE(sat)—I C hFE —I C C ob —V CB C re —V CE fT —I E PG — IC NF — IE