2SA1768 SANYO
Document overview
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Technical content
Features
. Adoption of MBIT process - High breakdown voltage, large current capacity - Fast switching speed ( ):2SA1768 Absolute Maximum Ratings at Ta =25°C unit Collector to Base Voltage Vcso (—)180 v Collector to Emitter Voltage Vogo (—)160 v Emitter to Base Voltage VeBo (—)6 Vv Collector Current. Io (-)0.7 A Collector Current(Pulse) Top (-)1L.5 A Collector Dissipation Pc 1 Ww Junction Temperature Tj . 150 °C Storage Temperature Tstg -—55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit Collector CutoffCurrent —Icgo Vep=(-)120V,Ig=0 (-)0.1 pA Emitter Cutoff Current Ippo Vep=(—)4V,ic=0 (-)0.1 pA DC Current Gain hpe(1) Vor=(—)5V,I¢=(—)100mA 100% 400% hpg(2) Vor=(—)5V,I¢=(—)10mA 90 Gain-Bandwidth Product fr Voge =(—)10V,In=(—)50mA 120 MHz Output Capacitance Cob Vop=(—)10V,f=1MHz (1198 pF C-E Saturation Voltage Versat) I¢=250mA,Ig=(—)25mA (—0.2)0.12 (—0.5)0.4 Vv B-E Saturation Voltage Vppisaty) Ic =250mA,[g=(—)25mA (-)0.85 (-)12 Vv C-B Breakdown Voltage Vipricso Ic=10pA,Jg=0 (—)180 Vv C-E Breakdown Voltage Vesryceo Ic=1mA,Rpp=° (—)160 v E-B Breakdown Voltage Vigrepo Ip=10pA,Ic=0 6 v Turn-ON Time ton See specified Test Circuit. (60)50 ns Storage Time tstg o (900)1000 ns Fall Time te * (60)60 ns
2 The 25A1768/2SC4612 are classified by 100mA hpg as follows : “ v
106 R 200 140 S$ 280 200 T 400 | L
Package Dimensi [~~] Switching Time Test Circuit ackage Dimensions2064 J pieme 18 (unit: mm ) “g| ary ° Ie * ey iam « || J wor Tal \\s q Hf P | i 0: 3 30 ee ¢ 6 0.45 He He {On ‘my | E: Emitter - tov. C: Collector 201g) =—201g2=Ie= 300m B: Base (For PNP, the polarity is reversed.) : 2s . Unit(Resistance : 0 , Capacitance : F) 2st SANYO: NMP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 5110MO,TS No.3582-1/4
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a TTT] ae Pa LT TTT Te FHA “Et HH 5H ctor Currentlg mA (TTT _] 0 Collec Tr | =100 82-2/4 #0 Collector Currentice mA No. 3582
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2 Pc - Ta
= 1.0 2 N a H “TIN an Sol IN < a 3 \\ TNS ° IN 0 20 40 60 60 iM 120 140 160 Ambient Temperature,Ta — °C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the faiture of which may directly or indirectly cause injury, death or property loss. @ Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and fitigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Wi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. eee No.3582-4/4