2SC4602 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Surface mount type device making the following possible -Reduction in the number of manufacturing processes for 25C4602-applied equipment -High density surface mount applications -Small size of 25C46U2-applied equipment + High breakdown voltage, high reliability - Fast switching speed - Wide ASO - Adoption of MBIT process Absolute Maximum Ratings at Ta= 25°C unit Collector to Base Voltage Voso 1100 Vv Collector to Emitter Voltage Vcro 800 Vv Emitter to Base Voltage VEBO 7 Vv Collector Current. Ic 3 A Collector Current(Pulse) lop PWS 300ps,duty cycle S 10% 10 0A Base Current Ip 15 A Collector Dissipation Po 165 W Tce=25°C 50 Ww Junction Temperature Tj 150 °C Storage Temperature Tstg -55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit Collector CutoffCurrent — Icgo Vop=800V,Ig=0 10 pA Emitter Cutoff Current IeBo VeB=5V,Ic=0 10) pA DC Current Gain hpp(1) Vor=5V,Ic¢=0.2A 10* 40% hpg(2) Vor=5V,Ic=1A 8 Gain-Bandwidth Product fr Vor=10V,Ic¢=0.2A 15 MHz Output Capacitance Cob Vop=10V,f=1MHz 60 pF C-E Saturation Voltage VoEisat) Io=1.5A,Ip=0.3A 2.0 v B-E Saturation Voltage Vex(set) I¢=1.5A,1p=0.3A 1.5 v Continued on next page. % : For the hpg(1) of the 2504602, specify two ranks or more in principle. 10 kK 20 | 15 t 30 | 20 mM 40 | Package Dimensions 2069 (unit : mm) . 0.2 45. ———— ; | 4 «fl + UD g “5 8 2 are] C: colt CHIT 3s e: enictee™ SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 6209MO,TS No.3148-1/4

. A Continued from preceding page. min typ max unit C-B Breakdown Voltage Visricsao)=— Ic = 1mA,Ig=0 1100 Vv C-E Breakdown Voltage Vieryceo Ic=5mA,Rgp=” 800 Vv E-B Breakdown Voltage VisreBO Ig=imA,Ic=0 7 v C-E Sustain Voltage Vorxieus) 1o=1.5A.Ip1= ~Tne=0.34, 800 v =2mH,clampe Turn-ON Time ton Ic=2A,Ip1=0.4A, 0.5 BS Storage Time tstg Ige= —0.8A,R, = 2002, 3.0 ps Fall Time tr Voc=400V 03 ps Switching Time Test Circuit te ys RB (iP oO ” a - vat a vBE=-5¥ vec= 4oov Unit (Resistance : , Capacitance : F)

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No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may direotly or indirectly cause injury, death or property loss. | Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.3148-4/4