2SC4601 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
Surface mount type device making the following possible. Reduction in the number of manufacturing processes for 2SC4601-applied equipment. High density surface mount applications. Small size of 2SC4601-applied equipment. High breakdown voltage, high reliability. Fast switching speed. Wide ASO. Adoption of MBIT process. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 1100 V Collector-emitter voltage V CEO 800 V Emitter-base voltage V EBO 7V Collector current ( DC) I C 1.5 Collector current (Pulse) * I CP 5 Base current I B 0.8 A Collector power dissipation Ta = 25 1.65 TC =2 5 40 Junction temperature T j 150 Storage temperature range T stg - 5 5t o+ 1 5 0 *P W 300ms, duty cycle 10% PC A W
www.kexin.com.cn Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current I CBO VCB =8 0 0V ,IE =0 1 0 ì A Emitter cut-off current I EBO VEB =5V ,I C =0 1 0 ì A VCE =5V ,I C =0 . 1 A 1 0 4 0 VCE =5V ,I C =0 . 5 A 8 Gain-Bandwidth product fT V CE =1 0V ,IC =0.1A 15 MHz Output Capacitance Cob V CB=10V,f=1MHz 35 pF Collector-emitter saturation voltage V CE (sat) IC =0 . 7 5A ,IB =0 . 1 5A 2 . 0 V Base-emitter saturation voltage V BE (sat) IC =0.75 A, IB =0 . 1 5A 1 . 5 V Collector-base breakdown voltage V (BR) CBO IC =1m A ,IE = 0 1100 V Collector-emitter breakdown voltage V (BR) CEO IC = 5 mA,RBE= 800 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=1mA,IC=0 7 V Collector-to-Emitter Sustain Voltage V CEO(SUS) IC=0.75A,IB1=-IB2=0.15A,L=50mH 800 V Turn-ON time ton 0.5 Storage time t stg 3.0 Fall time t f 0.3 DC current gain ìs hFE IC=1A,IB1=0.2A,IB2=-0.4A,RL=400 Ù,VCC=400V Switching Time Test Circuit hFE Classification Rank K L M h F E 1 0t o2 0 1 5t o3 0 2 0t o4 0 2SC4601