2SC4600 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Features

. Surface mount type device making the following possible -Reduction in the number of manufacturing processes for 25C4600-applied equipment -High density surface mount applications -Small size of 25C4600-applied equipment + High breakdown voltage, high reliability - Fast switching speed + Wide ASO + Adoption of MBIT process Absolute Maximum Ratings at Ta= 25°C unit Collector to Base Voltage Vocso 800 Vv Collector to Emitter Voltage Voro 500 v Emitter to Base Voltage VEBO 7 Vv Collector Current Ic 5 A Collector Current(Pulse) Icp PWS300ps,duty cycle S$ 10% 10 A Base Current Ig 2 A Collector Dissipation Po 165 W Te=25°C 50 WwW Junction Temperature Tj 150 °C Storage Temperature Tstg -55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit Collector Cutoff Current Topo Vop=500V In =0 10 pA Emitter Cutoff Current lgBo Vep=5V,Ic=0 10) pA DC Current Gain hpg(1) Vor=5V,Ic=0.6A 15% 50% hpg(2) Voe=5V,Ic=3A 8 Gain-Bandwidth Product fr Voe=10V,Ic¢=0.6A 18 MHz Output Capacitance Cob Vos=10V,f=1MHz 80 pF C-E Saturation Voltage VeKisat) Ic=3A,Ip=0.6A. 1.0 Vv B-E Saturation Voltage VBEisat) Ic=3A,lp=0.6A 1.5 Vv Continued on next page. : For the hpg(1) of the 25C4600, specify two ranks or more in principle. Package Dimensions 2069 (unit : mm) wz 43 rt HS uy “HY 3 oe} B: Base naan C: Collector SE: Emitter 2.55 2.55 SANYO: SMP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 6209MO,TS No.3146-1/4

2s¢4600 eee Continued from preceding page. ‘min typ max unit C-B Breakdown Voltage Vearncso Ic=1mA,Ip=0 * “800 Vv C-E Breakdown Voltage Vipricceo §=—- Ic = mA, Rgp= © 500 Vv E-B Breakdown Voltage VieryeBo = Ip=1mA,Ic=0 7 Vv C-E Sustain Voltage Vcgosus) Ic=5A,Ig1=1A,L=50pH 500 Vv VeExisus) jee 2-5A.lBL =—Ipo=1A, 500 v =1mH,clamped Turn-ON Time ton Ic=4A,Ipi=0.8A, 0.5 ps Storage Time tstg Ipe= —1.6A,RL=502, 3.0 ps Fall Time te Voc=200V 0.3 ps Switching Time Test Circuit PW = 20ps Ia Duty 51% ened SL Re (> Sr c) [ee is RAL 0 VR. ar veee-SV vec 2cov Unit (Resistance : 2, Capacitance : F) Ic_- Vee Ic - Vee 6 6 Vog=5V brn | | LTT] fT Tit tL) tt vim ioe L| ESET | l pb ie Seer om TG 7_iI 6 il —— eo Eo 1 ee VAs) | oT TT TT te=0 7] A J A ° 1 2 3 4 5 6 7 8 os 0 oO 0.2 04 0.6 0.8 7.6 12 Collector to Emitter Voltage,Vcg — V Base to Emitter Voltage, Vpz — V hre - Ic Vee(sat) ~ Ic G a LUT TT TT eRe 10 1 Cao ALE 3 a seco ee

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SS. SSS No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, yehicles, disaster/crime-prevention equipment and “the like, the failure of which may directly or indirectly cause injury, death or property loss, HM Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO,, LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. I Information (including circuit diagrams and cirouit parameters) herein is for example only; it is not guarant- "eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.3146-4/4