2SC4600 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
Surface mount type device making the following possible. Reduction in the number of manufacturing processes for 2SC4600-applied equipment. High density surface mount applications. Small size of 2SC4600-applied equipment. High breakdown voltage, high reliability. Fast switching speed. Wide ASO. Adoption of MBIT process. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 800 V Collector-emitter voltage V CEO 500 V Emitter-base voltage V EBO 7V Collector current ( DC) I C 5 Collector current (Pulse) * I CP 10 Base current I B 2A Collector power dissipation Ta = 25 1.65 TC =2 5 50 Junction temperature T j 150 Storage temperature range T stg - 5 5t o+ 1 5 0 *P W 300ms, duty cycle 10% PC A W
www.kexin.com.cn Switching Time Test Circuit Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current I CBO VCB = 500 V, IE =0 1 0 ì A Emitter cut-off current I EBO VEB =5V ,I C =0 1 0 ì A VCE =5V ,I C =0 . 6 A 1 5 5 0 VCE =5V ,I C =3 A 8 Gain-Bandwidth product fT V CE =1 0V ,IC =0.6A 18 MHz Output Capacitance Cob V CB=10V,f=1MHz 80 pF Collector-emitter saturation voltage V CE (sat) IC =3A ,I B = 0.6 A 1.0 V Base-emitter saturation voltage V BE (sat) IC =3 A, IB = 0.6 A 1.5 V Collector-base breakdown voltage V (BR) CBO IC =1m A ,IE = 0 800 V Collector-emitter breakdown voltage V (BR) CEO IC = 5 mA,RBE= 500 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=1mA,IC=0 7 V VCEO(SUS) IC=5A,IB1=1A,L=50ìH 500 V VCEX(SUS) IC=2.5A,IB1=-IB2=1A,L=1mH 500 Turn-ON time ton 0.5 Storage time t stg 3.0 Fall time t f 0.3 DC current gain ìs hFE IC=4A,IB1=0.8A,IB2=-1.6A,RL=50 Ù,VCC=200V Collector-to-Emitter Sustain Voltage hFE Classification Rank L M N h F E 1 5t o3 0 2 0t o4 0 3 0t o5 0 2SC4600