2SC4597 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
Surface mount type device making the following possible. Reduction in the number of manufacturing processes for 2SC4597-applied equipment. High density surface mount applications. Small size of 2SC4597-applied equipment. High breakdown voltage, high reliability. Fast switching speed. Wide ASO. Adoption of MBIT process. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 500 V Collector-emitter voltage V CEO 400 V Emitter-base voltage V EBO 7V Collector current ( DC) I C 4 Collector current (Pulse) * I CP 8 Base current I B 1.5 A Collector power dissipation Ta = 25 1.65 TC =2 5 40 Junction temperature T j 150 Storage temperature range T stg - 5 5t o+ 1 5 0 *P W 300ms, duty cycle 10% PC A W
www.kexin.com.cn Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current I CBO VCB = 400 V, IE =0 1 0 ì A Emitter cut-off current I EBO VEB =5V ,I C =0 1 0 ì A VCE =5V ,I C =0 . 4 A 1 5 5 0 VCE =5V ,I C =2 A 1 0 VCE =5V ,I C =10mA 10 Gain-Bandwidth product fT V CE =1 0V ,IC =0.4A 20 MHz Output Capacitance Cob V CB=10V,f=1MHz 50 pF Collector-emitter saturation voltage V CE (sat) IC =2A ,I B = 0.4 A 0.8 V Base-emitter saturation voltage V BE (sat) IC =2A ,I B = 0.4 A 1.5 V Collector-base breakdown voltage V (BR) CBO IC =1m A ,IE = 0 500 V Collector-emitter breakdown voltage V (BR) CEO IC = 5 mA,RBE= 400 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=1mA,IC=0 7 Collector-to-Emitter Sustain Voltage V CEX(SUS) IC=2A,IB1=0.2A,L=1mH,IB2=-0.8A 400 Turn-ON time ton 0.5 Storage time t stg 2.5 Fall time t f 0.3 DC current gain ìs hFE IC=3A,IB1=0.6A,IB2=-1.2A,RL=66.6 Ù,VCC=200V 2SC4597 hFE Classification Rank L M N h F E 1 5t o3 0 2 0t o4 0 3 0t o5 0 Switching Time Test Circuit