2SC4572 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

Features

. High breakdown voltage + Small Cob » High reliability (Adoption of HVP process) Absolute Maximum Ratings at Ta= 25°C unit Collector-toBase Voltage Voso 800 Vv Collector-toEmitter Voltage Vcro 800 Vv Emitter-toBase Voltage VEBO qT v Collector Current. Io 20 mA Collector Current (Pulse) Top 60 mA Collector Dissipation Po 1.75 Ww Junction Temperature Tj 150 °C Storage Temperature Tstg ~55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit Collector Cutoff Current IcBo Vcp=800V,Ip=0 1 pA Emitter Cutoff Current Izpo Vep=5V,Ic=0 1 pA DC Current Gain hrp(1) Vor=5V,I¢=2mA 20 50 hpp(2) Voz=5V,Ic¢=10mA 10 Gain-Bandwidth Product fr Vor=10V Ig=2mA 40 MHz Output Capacitance Cob Vos=100V,f=1MHz 1.6 pF C-E Saturation Voltage VoE‘eat) Ig=10mA,Ip=2mA 1 v B-E Saturation Voltage VBE(sat) Ig=10mA,Ip=2mA 1.5 Vv C-B Breakdown Voltage Vercso Ic=100zA,lg=0 800 Vv C-E Breakdown Voltage Veryczo Io=1mA,Rpp=° 800 v E-B Breakdown Voltage Verso Ip=100uA,Io=0 7 Vv Thermal Resistance Rthg -0) Junction — Case 8.3 °Clw Package Dimensions 2010B (unit : mm) 8.1 14.0 rae : a E, 63.6 1.2 108 5 E: Emitter a] felt C: Collector .4 B: Base

3 JEDEC: TO-220AB

EIAJ : SC-46 SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN D251MH/D149MO,TS No.3252-1/3

| AS ee a ee | a | | 2p ae oe Ser 22 Wek A Za — BV ama Kee | fs 4S ne eae 2¢.1 7.1.11) g,f bP Pere ed (a j——} tT ina | Ltt tt tp of | EE eo TT | oL tt | | [mee] | T 4 0 2 4 1 ColleetortoBmitter Voltage,Vog = V ° ° Collector-to Emitter Voltoge,Vog — V ° Ie _~ VBE on) hee -_ | TEL) FARA + SOc i an I | I || ee OO 245 5 go —taeno | TT E a na 2 tps DPN TT 8 9 a i fe EEN tt 8 ° NS COCO caer 3 | a UA |) ere % 0.2 04 06 08 10 1.2 44 S723 5 79 23 8 wp 235 Base-to-Emitter ON-State Voltage,Varon) - V Collector Current,I¢ — mA

2 Cob - Veg Vce(saty - Ic

! |f=1MHz woo es). See oe A geocths gC Cr ro] Bg | tt : PASS 2 CoCo Bo a se Jt Site yy 83 3 T= or | 1s PESTER See onan 3, Pemerper | | F : TP TT | LITT Tit i a 5 04 238 49 2395 yp 23 5 yy 2 Toy FS 81qg FB S14 FSS Collector-to.Base Voltage,Vcp — V Collector Current,Ig — mA ‘corey eters lor > TI | | [Ty Tye] < ten fet ET sodas iD coo 1ST 33 £ O oe ee &3 | a 8 * FP i eee ee ee EF pee 8 in 3 hon Coe Cr) (Seca | ETT Son FPS 49 22 8 G9 23 5 OST 9 203 5 7 ia 203° 5 7 so Collector Current,l¢ — mA Collector-to-Emitter Voltage,Vog — V No.3252-2/3

§ 12) ‘Ss § QI Zod z i LIN [I = 04 “PY TPN t) IN of wT I60 Ambient Temperature,Ta — °C I No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power’tontrol systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. M@ Anyone purchasing any products described or contained herein for an above-mentioned use shall: © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and alt claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD,, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Mi Information (including circuit diagrams and circuit parameters) herein is tor example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.3252-3/3