2SC4562 PANASONIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1748 n Features l High transition frequency fT. l Small collector output capacitance Cob. l S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Emitter EIAJ:SC–70 3:Collector S–Mini Type Package 2.1–0.1 1.3–0.10.9–0.1 0.7–0.1 0.3 +0.1 –0 0.15 +0.1 –0.05 2.0–0.2 0.650.2 0.65 0 to 0.1 0.2–0.1 Symbol V CBO V CEO V EBO IC PC Tj Tstg Ratings 150 150 –55 ~ +150 Unit V V V mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol I CBO ICEO V CBO V CEO V EBO hFE * V CE(sat) fT C ob Conditions V CB = 10V , IE = 0 V CE = 10V , IB = 0 IC = 10mA, IE = 0 IC = 1mA, IB = 0 IE = 10mA, IC = 0 V CE = 10V , IC = 2mA IC = 10mA, IB = 1mA V CB = 10V , IE = –2mA, f = 200MHz V CB = 10V , IE = 0, f = 1MHz min 200 typ 0.06 250 1.5 max 0.1 100 500 0.3 Unit mA mA V V V V MHz pF Marking symbol :AM *hFE Rank classification Rank Q R hFE 200 ~ 400 250 ~ 500 Marking Symbol AMQ AMR
PC — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IE C ob — V CB 0 160 40 120 80 14020 100 60 240 200 160 120 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 01 2 10826 4 120 100 Ta=25˚C 250mA 200mA 150mA 100mA 50mA IB=300mA Collector to emitter voltage VCE (V) Collector current IC (mA ) VCE =10V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3
100 IC /IB=10
Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 600 500 400 300 200 100 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 600 500 400 300 200 100 VCB =10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF)