2SC4562 KEXIN
Document overview
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Technical content
Features
High transition frequency fT. Small collector output capacitance cob. Silicon NPN Epitaxial Planar Type 2SC4562 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 50 V Collector-emitter voltage V CEO 50 V Emitter-base voltage V EBO 5V Collector current I C 50 mA Collector power dissipation P C 150 mW Junction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0 hFE Classification Marking Rank Q R hFE 200 400 250 500 AM Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage V CBO IC =1 0ì A ,IE =0 5 0 V Collector-emitter voltage V CEO IC =1m A ,IB =0 5 0 V Emitter-base voltage V EBO IE =1 0ì A ,IC =0 5 V Collector cutoff current I CBO VCB =1 0V ,IE =0 0 . 1 ì A Emitter cutoff current I EBO VCE =1 0V ,IB = 0 100 ìA Forward current transfer ratio h FE VCE =1 0V ,IC = 2 mA 200 500 Collector-emitter saturation voltage V CE(sat) IC =1 0m A ,IB = 1 mA 0.06 0.30 V Transition frequency f T VCB =1 0V ,IE = -2 mA, f = 200 MHz 250 MHz Collector output capacitance C ob VCB =1 0V ,IE =0 ,f=1M H z 1 . 5 p F