2SC4555 KEXIN
Document overview
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Technical content
Features
Low collector-to-emitter saturation voltage. NPN Epitaxial Planar Silicon Transistor 2SC4555 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 20 V Collector-emitter voltage V CEO 15 V Emitter-base voltage V EBO 5V Collector current I C 500 mA Collector current(Pulse) I CP 1A Collector dissipation P C 150 mW Junction temperature T j 105 Storage temperature T stg - 5 5t o+ 1 5 0 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current I CBO VCB =1 5 V ,IE=0 0.1 ìA Emitter cutoff current I EBO VEB =4 V ,IC=0 0.1 ìA DC current gain h FE VCE =2 V,I C = 10mA 135 600 Gain bandwidth product f T VCE =2 V,I C =5 0 m A 3 0 0 M H z Output capacitance C ob VCB = 10V, f = 1MHz 4.0 pF IC =5 m A,IB =0 . 5 m A 3 0 V IC =2 0 0 m A,IB = 10mA 160 300 Base-to-emitter saturation voltage V BE(sat) IC =2 0 0 m A,IB = 10mA 0.95 1.2 V Collector-to-base breakdown voltage V (BR)CBO IC =1 0 ì A,IE =0 2 0 V Collector-to-emitter breakdown voltage V (BR)CEO IC =1 m A,RBE = 15 V Emitter-to-base breakdown voltage V (BR)EBO IE =1 0 ì A,IC =0 5 V Collector-to-emitter saturation voltage V CE(sat) hFE Classification Marking Rank 5 6 7 hFE 135 270 200 400 300 600 UT
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