2SC4543 PANASONIC
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
Silicon NPN epitaxial planer type For video amplifier n Features l High transition frequency fT. l Small collector output capacitance Cob. l Wide current range. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Collector EIAJ:SC–62 3:Emitter Mini Power Type Package 4.5–0.1 2.6–0.1 2.5–0.1 0.4max.1.0 +0.1 –0.2 4.0 +0.25 –0.20 3.0–0.15 1.5–0.1 0.4–0.08 0.5–0.08 1.5–0.1 0.4–0.04 1.6–0.2 45° marking 321Symbol V CBO V CER *1 V CEO V EBO ICP IC PC *2 Tj Tstg Ratings 110 100 3.5 300 150 1.0 150 –55 ~ +150 Unit V V V V mA mA W n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICEO V CBO V CER V CEO V EBO hFE V CE(sat) fT1 fT2 C ob Conditions V CE = 35V , IB = 0 IC = 100mA, IE = 0 IC = 500mA, RBE = 470W IC = 1mA, IB = 0 IE = 100mA, IC = 0 V CE = 5V , IC = 100mA* IC = 150mA, IB = 15mA* V CB = 10V , IE = –10mA, f = 200MHz V CB = 10V , IE = –110mA*, f = 200MHz V CB = 30V , IE = 0, f = 1MHz min 110 100 3.5 typ 300 350 max 0.5 Unit mA V V V V V MHz MHz pF * Pulse measurement Marking symbol :1F *1 R EB = 1.2kW *2 Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion
PC — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IE C ob — V CB 0 160 40 120 80 14020 100 60 1.6 1.2 0.4 1.0 1.4 0.8 0.2 0.6 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 240 200 160 120 Ta=25˚C 0.5mA 1.0mA 1.5mA 2.0mA 2.5mA 3.0mA 3.5mA 4.0mA 4.5mA IB=5.0mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 120 100 VCE =5V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3
100 IC /IB=10
Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 120 100 VCE =5V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 600 500 400 300 200 100 VCB =10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF)