2SC4542 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4542
DESCRIPTION
- High Breakdown Voltage- : V CBO= 1500V (Min)
- High Switching Speed
APPLICATIONS
- Horizontal deflection output for high resolution display.
- High speed switching regulator outp ut applications. ABSOLUTE MAXIMUM RATINGS(T a=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 10 A ICM Collector Current- Peak 20 A IB B Base Current 5 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4542
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.7A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.7A B 1.5 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; I IB= 0 600 V ICBO Collector Cutoff Current VCB= 1500V ; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 10 μA hFE DC Current Gain IC= 1A ; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V 1 3 MHz COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1.0MHz 210 pF Switching Times tstg Storage Time 1.8 2.5 μs tf Fall Time ICP= 7A , IB1= 1.4A; IB2= -2.8A; RL= 28.5Ω 0.1 0.2 μs isc Website：www.iscsemi.cn 2