2SC4541_04 TOSHIBA

Document overview

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Technical content

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4541 Power Amplifier Applications Power Switching Applications

  • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A)
  • High speed switching time: tstg = 0.5 µs (typ.)
  • Small flat package
  • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
  • Complementary to 2SA1736 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V CBO 80 V Collector-emitter voltage V CEO 50 V Emitter-base voltage V EBO 6 V Collector current I C 3 A Base current I B 0.6 A Collector power dissipation P C 500 mW Collector power dissipation PC (Note) 1000 mW Junction temperature T j 150 °C Storage temperature range T stg −55 to 150 °C Note: Mounted on a ceramic substrate (250 mm 2 × 0.8 t) Unit: mm JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.)

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I CBO VCB = 80 V, IE = 0 ― ― 0.1 µA Emitter cut-off current I EBO VEB = 6 V, IC = 0 ― ― 0.1 µA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 ― ― V hFE (1) VCE = 2 V, IC = 100 mA 120 ― 400 DC current gain hFE (2) V CE = 2 V, IC = 2 A 40 ― ― Collector-emitter saturation voltage V CE (sat) IC = 1.5 A, IB = 75 mA ― ― 0.5 V Base-emitter saturation voltage V BE (sat) IC = 1.5 A, IB = 75 mA ― ― 1.2 V Transition frequency f T VCE = 2 V, IC = 100 mA ― 100 ― MHz Collector output capacitance C ob V CB = 10 V, IE = 0, f = 1 MHz ― 20 ― pF Turn-on time t on ― 0.1 ― Storage time t stg ― 0.5 ― Switching time Fall time t f ― 0.1 ― µs Marking 20 Ω OUTPUT IB1 30 V INPUT IB1 20 µs IB1 = −IB2 = 75 mA, DUTY CYCLE ≤ 1% IB2 IB2 K D Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.

Collector current I C (mA) Collector-emitter voltage V CE (V) IC – VCE Collector current I C ( A ) Collector current I C (mA) hFE – IC DC current gain h FE Collector current I C (mA) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) ( V ) VBE (sat) – IC Base-emitter saturation voltage VBE (sat) ( V ) Ta = −25°C 100 Common emitter IC/IB = 20 100 10 300 3 30 100 0.1 1000 3000 0.3 Common emitter IC/IB = 20 0.01 Ta = 100°C −25 0.03 0.1 0.3 1 10 300 3 30 100 1000 3000 1000 10 300 3 300 Common emitter VCE = 2 V 30 100 Ta = 100°C 100 −25 1000 3000 0 5 1 Common emitter Ta = 25°C IB = 5 mA 4 2

Base-emitter voltage V BE (V) IC – VBE Collector current I C ( A ) Collector-emitter voltage V CE (V) Safe Operating Area Collector current I C ( A ) Ambient temperature Ta (°C) PC – Ta Collector power dissipation P C (W) 2.0 0 1.6 0.8 0.4 1.0 3.0 Common emitter VCE = 2 V 2.0 1.2 −25 Ta = 100°C 0.5 1.5 2.5 (1) 0 160100 140 40 80 0.6 0.2 0.8 0.4 1.4 (1) Mounted on a ceramic substrate (250 mm2 × 0.8 t) (2) No heat sink (2) 1.0 60 120 1.2 0.1 10 1 0.3 0.01 0.005 0.03 IC max (pulse)* IC max (continuous) *100 ms *10 ms *t = 1 ms 0.1 0.3 100 *: Single nonrepetitive pulse Ta = 25°C : Mounted on a ceramic substrate Curves must be derated linearly with increase in temperature : DC operation Ta = 25°C 40 × 50 × 0.8 t : DC operation Ta = 25°C 250 mm 2 × 0.8 t : DC operation Ta = 25°C VCEO max

  • The information contained herein is subject to change without notice.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
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