2SC4540_04 TOSHIBA

Document overview

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Technical content

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4540 Power Amplifier Applications Power Switching Applications

  • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA)
  • High speed switching time: tstg = 0.4 µs (typ.)
  • Small flat package
  • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
  • Complementary to 2SA1735 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V CBO 80 V Collector-emitter voltage V CEO 50 V Emitter-base voltage V EBO 6 V Collector current I C 1 A Base current I B 0.2 A Collector power dissipation P C 500 mW Collector power dissipation PC (Note) 1000 mW Junction temperature T j 150 °C Storage temperature range T stg −55 to 150 °C Note: Mounted on a ceramic substrate (250 mm 2 × 0.8 t) Unit: mm JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.)

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I CBO VCB = 80 V, IE = 0 ― ― 0.1 µA Emitter cut-off current I EBO VEB = 6 V, IC = 0 ― ― 0.1 µA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 ― ― V hFE (1) VCE = 2 V, IC = 100 mA 120 ― 400 DC current gain hFE (2) V CE = 2 V, IC = 700 mA 40 ― ― Collector-emitter saturation voltage V CE (sat) IC = 500 mA, IB = 25 mA ― ― 0.5 V Base-emitter saturation voltage V BE (sat) IC = 500 mA, IB = 25 mA ― ― 1.2 V Transition frequency f T VCE = 2 V, IC = 100 mA ― 100 ― MHz Collector output capacitance C ob V CB = 10 V, IE = 0, f = 1 MHz ― 10 ― pF Turn-on time t on ― 0.1 ― Storage time t stg ― 0.4 ― Switching time Fall time t f ― 0.1 ― µs Marking 50 Ω OUTPUT IB1 25 V INPUT IB1 20 µs IB1 = −IB2 = 35 mA, DUTY CYCLE ≤ 1% IB2 IB2 K C Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.

Collector-emitter voltage V CE (V) Collector current I C ( A ) Collector current I C ( m A ) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) ( V ) Collector current I C ( m A ) hFE – IC DC current gain h FE Collector current I C ( m A ) VBE (sat) – IC Base-emitter saturation voltage VBE (sat) ( V ) IC – VCE 0 16 8 4 0.6 1.0 Common emitter Ta = 25°C 0.8 IB = 1 mA 0.2 0.4 8 6 Base-emitter voltage V BE (V) IC – VBE Collector current I C ( A ) Ambient temperature Ta (°C) PC – Ta Collector power dissipation P C (W) 0.4 40 100 20 0.2 60 80 0.8 1.0 1.4 120 (1) Mounted on a ceramic substrate (250 mm2 × 0.8 t) (2) No heat sink 140 160 0.6 1.2 (1) (2) 0 1.2 0.4 0.8 1.2 1.0 0.8 0.4 0.6 1.6 2.0 0.2 Common emitter VCE = 2 V Ta = 100°C −25 30 3000 3 100 300 100 300 1000

3 Common emitter

VCE = 2 V Ta = 100°C −25 10 1000 0.3 30 30003 0.1 0.01 100 300 0.03 Common emitter IC/IB = 20 Ta = −25°C 25 100 10 1000 1 30 3000 3 0.1 100 300 100 0.3 Common emitter IC/IB = 20 Ta = −25°C 100 10 1000

  • The information contained herein is subject to change without notice.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
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