2SC4523 SANYO
Document overview
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Technical content
Ordering number: EN 3142A No.3142A 28C4523 S. ANYO NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features : - Adoption of FBET, MBIT processes - Large current capacity + Low collector-to-emitter saturation voltage - Fast switching speed Absolute Maximum Ratings at Ta= 25°C unit Collector to Base Voltage Vcso 60 v Collector to Emitter Voltage Vczo 45 Vv Emitter to Base Voltage VEBO 5 v Collector Current Ic 8 A Collector Current(Pulse) Top 12 A . Collector Dissipation Po 1 WwW Te=25°C 15 Ww Junction Temperature Tj 150 «°C Storage Temperature Tstg —55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit Collector Cutoff Current Tcpo Ves=45V,In=0 1 pA Emitter Cutoff Current Tego Vep=2V,Ic=0 10 pA DC Current Gain hrg(1) Vog=2V,I¢=500mA 100% 400% hpg(2) Vee=2V,Ic=8A 40 Gain-Bandwidth Product fr Vor=2V,l¢=500mA 250 MHz Output Capacitance Cob Vop=10V,f=1MHz 65 pF C-E Saturation Voltage VoKisat) Ig=4A,Ip=200mA 0.25 0.7 Vv B-E Saturation Voltage VBE(cat) Ic=4A,Ip=200mA 0.95 13 v C-B Breakdown Voltage Veercso I¢=1004A,Ig=0 60 v C-E Breakdown Voltage Verceo Ic=1mA,Rpp=° 45 v E-B Breakdown Voltage Vereso = Ig=100¢A,Io=0 5 v Turn-ON Time ton See specified Test Circuit. 50 100° ns Storage Time tetg ” 150 270 ns Turn-OFF Time ton a 180 350 ns * : The 2SC4523 is classified by 500mA hpg as follows: 100 R 200 140 S 280 200 T. 400 Package Dimensions 2044B Package Dimensions 2045B (unit : mm) (unit: mm) p- 3-4), B rt 3, Switching Time Test Circuit [: 58 4] i 7 Ob as eT G ¢ f a RB &) RL ou 1 oss at a ! woe f°" 9.7, - 1 2rd 3 a ioe + 06 be o5 0.6.7) a 201g = = 20lag =1c=4A 123 1:Base 3: Emitter 2: Collector 4: Collector Unit (Resistance : 9, Capacitance : F) Poa] 3: Emitter SANYO: TP-FA 4: Collector 23-o|--}--f-23 SANYO: TP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 7130MH/7059MO,TS No.3142-1/3
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Ol 1,0 10 10 [) 20 40 60 80 1 120 uO 160 Collector to Emitter Voltage,Vcr — V Ambient Temperature,Ta — °C MI No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. M Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally, I Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.3142-3/3