2SC4522 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

Features

. Adoption of FBET, MBIT processes - Large current capacity - Low collector-to-emitter saturation voltage : Fast switching speed Absolute Maximum Ratings at Ta= 25°C unit Collector to Base Voltage Vcso 60 Vv Collector to Emitter Voltage Vcgo 45 Vv Emitter to Base Voltage VEBo 5 Vv Collector Current Ic 5 OA Collector Current(Pulse) Iop 8 A Collector Dissipation Pc 1 Ww Te=25°C 1 W Junction Temperature Tj 150 °C Storage Temperature Tstg —55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit Collector Cutoff Current IcBo Vop=45V,Ip=0 1 yA Emitter Cutoff Current lgpo Vep=2V,I¢=0 10 yA DC Current Gain hyg(1) Voe=2V,I¢=500mA 100% 400K hpg(2) Vor=2V,I¢=5A 40 Gain-Bandwidth Product fr Voe=2V,I¢=500mA 300 MHz Output Capacitance Cob Vep=10V,f=1MHz 40 pF C-E Saturation Voltage VeEtat) I¢=2.5A,Ip=125mA 0.25 0.7 Vv B-E Saturation Voltage VBE(sat) Ic=2.5A,Ip=125mA 0.95 1.3 v C-B Breakdown Voltage Vercso Ic=100zA,In=0 60 v C-E Breakdown Voltage Vieryceo = Ic=1mA,Rpg=© 45 Vv E-B Breakdown Voltage VeReBO Ig=100nA,Ic=0 5 v Turn-ON Time ton See specified Test Circuit. 50 100 ns Storage Time tstg ” 150 270 ns Turn-OFF Time tor + 180 350 ns > : The 28C4522 is classified by 500mA hpg as follows :

100 R 200 | 140 S$ 280 | 200 T 400 Package Dimensions 2044B

(unit ; mm) Package Dimensions 2045B (unit: mm) -.65_.4 2.3 rn Switching Time Test Circuit Eel 2 5 0 | , ft T RB J RL ou 0.08) art Ls

4 RR 70, —FAE ye 0; 4

‘T are . 05 a. A wet oN sav bod 1: Base = 2: Collector 20lg1 = ~ 20!an= le = 2.58 123 3: Emitter tee. tor 4: Collector Unit (Resistance : 2, Capacitance : F) faa 3: Emitter SANYO: TP-FA 2a-f-ffe2s 4: Collector SANYO: TP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 7130MH/7059MO, TS No.3141-1/3

  • Ie = Vee ‘ Ic = Vee _ es Ses qo oo i 2] ~-——Timl | OWI Hl E f E 8 1 = 5mA 8 7 / y y Yas | Pe v7 1 2 3 ust 5 % OF Oz < Al, To Collector to Emitter Voltage, Vcg — V Base to Emitter Voltage,Vpg — V hee = Ic — 100 fr_- Ic PPT iT Perm ttf ~ ae Geo COs el iit tl Ez 2) ieee TENN | at bo EN eee 5 ra wa PES gra et} PP) gs} aeueaie TT Coo SRE eT % 0.01 > o4 Ts 10 10 3 7 On 1.0 Collector Currentlg — A - - Collector Currentiig — A — Cob_— Vee , Vee(sat) — Ic —— TT Pe) sa i} > fe i & a 1 1000} 04 Pe 3 ee ee i ttt FT Tg 3 + 33 4 i PN 8 HSA

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a A s] | | i tp NT T,=25°C ] i = . tT ff Neheatsine; | Single pulse [J PN A A ies ae NN OF 1.0 33 10 100 ar) oO © O W D eo Collector to Emitter Voltage, Vog — V Ambient Temperature,Ta — °C IH No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. @ Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD,, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. @ Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.3141-3/3