2SC4520 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Features

. Adoption of FBET, MBIT processes + Large current capacity - Low collector-to-emitter saturation voltage + Fast switching speed - Small-sized package Absolute Maximum Ratings at Ta= 25°C unit Collector to Base Voltage Voso 60 Vv Collector.to Emitter Voltage Vcro 45 v Emitter to Base Voltage VEBO 5 v Collector Current Ig 15 A Collector Current(Pulse) Igp 3 A Collector Dissipation Pc Mounted on ceramic board (250mm2X0.8mm) 1.3 W Junction Temperature Tj 160 °C Storage Temperature Tstg -55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit Collector Cutoff Current Togo Vop=45V,Ig=0 1 pA Emitter Cutoff Current Igpo Vep=3V,Ic=0 1 pA DC Current Gain hpg() Voez=2V,I¢=100mA 100% 400% hpg(2) Vog=2V,I¢=1.5A 40 Gain-Bandwidth Product fy Voe=2V,I¢=100mA 300 MHz Output Capacitance Cob Vop=10V,f=1MHz 13 pF C-E Saturation Voltage Vox(sat) Ic¢=800mA,Igp=40mA 0.25 0.7 v B-E Saturation Voltage VpE(sat) Ig=800mA,Ip=40mA 09 13° =#V C-B Breakdown Voltage Vesrcso = Ic = 10pA,Ip=0 60 Vv C-E Breakdown Voltage Vorceo Io=1mA,Rgg=” 45 Vv E-B Breakdown Voltage Verso Ig=10pA,Ic=0 5 Vv Turn-ON Time ton See specified Test Circuit. 50 100 ns Storage Time tstg a 150 270 ns Turn-OF F Time torr a 180 350 ns %* : The 28C4520 is classified by 100mA hpg as follows: 200_T 400 Package Dimensions 2038 Marking : CK (unit : mm) hpgrank :R,S,T [pe | : Switching Time Test Circuit Tt aaa Le . i g r ° x somal 2 ih we) Ta a ime 0 wR + =3.9 Oe ‘A A : E: Emitter et Fh oy [EE] 6: contectoe 201g = ~ 2012 =Ic= 800A B: Base . | . SANYO: PCP Unit (Resistance : ©, Capacitance : F) : (Bottom View) SANYO Electric Co.,Ltd. Semiconductor Business Headquarters _ TOKYO OFFICE Tokyo _1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 7059MO,TS No.3139-1/3

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2 | || Ne TTA AAT Zoe Nee, ee ee oT rN NS Hos es, atti [TIN AAU Oo? X Bor > ~ 5 os Nee, | fe La a NT ens dar a SN | | 3 N& Mocha evar [ENE é Ny Mounted on ceramic board. IN x (250mm?x0.8mm): |] ° IN 1.0 . 10 (J 20 40 6 ) 100 no 140 160 Collector to Emitter Voltage,Vog - V Ambient Temperature,Ta ~ °C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power controt systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss, iy ry, y WM Anyone purchasing any products described or contained herein for an above-mentioned use shall: @ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. BM Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ee No.3139-3/3