2SC4520 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
Adoption of FBET, MBIT process. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. Small-sized package. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 60 V Collector-emitter voltage V CEO 45 V Emitter-base voltage V EBO 5V Collector current I C 1.5 A Collector current (pulse) I CP 3A Collector dissipation P C 1.3 W Junction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0
www.kexin.com.cn Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current I CBO VCB =4 5 V ,IE=0 1 ìA Emitter cutoff current I EBO VEB =3 V ,IC=0 1 ìA DC current gain h FE VCE =2 V,I C = 100mA 100 400 Gain bandwidth product f T VCE =2 V,I C = 100mA 300 MHz Output capacitance C ob VCB = 10V , f = 1.0MHz 13 pF Collector-emitter saturation voltage V CE(sat) IC = 800 mA , IB = 40mA 0.25 0.7 V Base-emitter saturation voltage V BE(sat) IC = 800 mV , IB = 40mA 0.9 1.3 V Collector-base breakdown voltage V (BR)CBO IC = 10ìA , IE =0 6 0 V Collector-emitter breakdown voltage V (BR)CEO IC =1 m A,RBE = 45 V Emitter-base breakdown voltage V (BR)EBO IE = 10ìA , IC =0 5 V Turn-on time t on 50 100 ns Storage time t stg 150 270 ns Fall time t f 180 350 ns hFE Classification Marking Rank R S T hFE 100 200 140 280 200 400 CK 2SC4520