2SC4519 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
Adoption of FBET process. Low collector-to-emitter saturation voltage. Fast switching speed. Small-sized package. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 60 V Collector-emitter voltage V CEO 45 V Emitter-base voltage V EBO 5V Collector current I C 500 mA Collector current (pulse) I cp 1A Collector dissipation P C 200 mW Junction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0
www.kexin.com.cn2 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current I CBO VCB = 45V, IE=0 0.5 ìA Emitter cutoff current I EBO VEB =3 V ,IC=0 0.5 ìA DC current gain h FE VCE =2 V,I C = 50mA 100 400 Gain bandwidth product f T VCE =2 V,I C = 50mA 360 MHz Output capacitance C ob VCB = 10V , f = 1.0MHz 4 pF Collector-emitter saturation voltage V CE(sat) IC =2 0 0 m A,IB = 10mA 0.15 0.45 V Base-emitter saturation voltage V BE(sat) IC =2 0 0 m V,IB = 10mA 0.8 1.2 V Collector-base breakdown voltage V (BR)CBO IC =1 0 ì A,IE =0 6 0 V Collector-emitter breakdown voltage V (BR)CEO IC =1 m A,RBE = 45 V Emitter-base breakdown voltage V (BR)EBO IE =1 0 ì A,IC =0 5 V Turn-on time t on 60 120 ns Storage time t stg 150 270 ns Fall time t f 200 350 ns 2SC4519 hFE Classification Marking Rank 4 5 6 hFE 100 200 140 280 200 400 TT