2SC4502 PANASONIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

Silicon NPN epitaxial planer type For mtermediate frequency amplification n Features l High transition frequency fT. l Large collector power dissipation PC . l Allowing supply with the radial taping. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base MT2 Type Package 2.5–0.1 4.5–0.114.5–0.5 2.5–0.5 2.5–0.5 2.5–0.1 6.9–0.1 1.05 –0.05 (1.45) 4.00.7 0.8 0.15 0.5 0.21.01.0 0.65 max. 0.45 +0.1 –0.05 0.45 +0.1 –0.05 321 Symbol V CBO V CEO V EBO IC PC * Tj Tstg Ratings 150 –55 ~ +150 Unit V V V mA W n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Common emitter reverse transfer capacitance Power gain Symbol ICBO V CBO V CEO V EBO hFE V CE(sat) fT C re PG Conditions V CB = 20V , IE = 0 IC = 100mA, IE = 0 IC = 1mA, IB = 0 IE = 100mA, IC = 0 V CE = 10V , IC = 10mA IC = 20mA, IB = 2mA V CB = 10V , IE = –10mA, f = 200MHz V CB = 10V , IE = –1mA, f = 10.7MHz V CB = 10V , IE = –10mA, f = 58MHz min 300 typ max 100 100 0.4 1.5 Unit nA V V V V MHz pF dB * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion 1.2–0.1 0.65max. 0.45 0.1 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. (HW type)

PC — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IE C ob — V CB C re — V CE PG — IE 0 160 40 120 80 14020 100 60 1.2 1.0 0.8 0.6 0.4 0.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W ) VCE =10V Ta=100˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 IC /IB=10

Ta=100˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 100 VCE =10V Ta=100˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 600 500 400 300 200 100 VCB =10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 3.0 2.5 2.0 1.5 1.0 0.5 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 1 3 10 30 100 –2.4 –2.0 –1.6 –1.2 – 0.8 – 0.4 IC =1mA f=10.7MHz Ta=25˚C Collector to emitter voltage VCE (V) Common emitter reverse transfer capacitance Cre (pF) VCB =10V f=58MHz Ta=25˚C Emitter current IE (mA ) Power gain PG (dB) 01 0 826 4 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA Collector to emitter voltage VCE (V) Collector current IC (mA )