2SC4497 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.iscsemi.com 1 iscSiliconNPNPowerTransistor 2SC4497
DESCRIPTION
- Collector-EmitterBreakdown Voltage -V(BR)CEO=300V(Min)
- Collector-EmitterSaturation Voltage -VCE(sat):0.5V(Max)@IC=20mA
APPLICATIONS
- Switching Regulators
- Converters
- PowerAmplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 300 V VCEO Collector-EmitterVoltage 300 V VEBO Emitter-BaseVoltage 6 V IC CollectorCurrent-Continuous 100 mA IB Basecurrent 20 mA PC CollectorPowerDissipation@TC=25℃ 200 mW TJ JunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
www.iscsemi.com 2 iscSiliconNPNPowerTransistor 2SC4497 ELECTRICALCHARACTERISTICS （TC=25℃ unless otherwisespecified） SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCBO Collector-EmitterBreakdownVoltage IC=0.1mA;IB=0 300 -- V VCEO Collector-EmitterBreakdownVoltage IC=10mA;IB=0 300 -- V VCE(sat) Collector-EmitterSaturationVoltage IC=20mA;IB=2mA -- 0.5 V VBE(sat) Base-EmitterSaturationVoltage IC=20mA;IB=2mA -- 1.2 V ICBO CollectorCutoffCurrent VCB=300V;IE=0 -- 0.1 uA IEBO EmitterCutoffCurrent VEB=6V;IC=0 -- 0.1 uA hFE-1 DCCurrentGain IC=20mA;VCE=10V 30 150 hFE-2 DCCurrentGain IC=1mA;VCE=10V 20 -- PACKAGEOUTLINE(UNIT:mm):
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