2SC4497_03 TOSHIBA
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 5
Technical content
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC4497 High Voltage Control Applications /Gb7/G20High voltage: VCBO = 300 V, VCEO = 300 V /Gb7/G20Low saturation voltage: VCE (sat) = 0.5 V (max) /Gb7/G20Small collector output capacitance: Cob = 3 pF (typ.) /Gb7/G20Complementary to 2SA1721 Maximum Ratings (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Rating Unit Collector-base voltage V CBO 300 V Collector-emitter voltage V CEO 300 V Emitter-base voltage V EBO 6 V Collector current I C 100 mA Base current I B 20 mA Collector power dissipation P C 200 mW Junction temperature T j 150 °C Storage temperature range T stg /G2d55~150 °C Marking Unit: mm JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.)
Electrical Characteristics (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I CBO V CB /G3d 300 V, IE /G3d 0 /Gbe/G20 /Gbe 0.1 /G6dA Emitter cut-off current I EBO V EB /G3d 6 V, IC /G3d 0 /Gbe /Gbe 0.1 /G6dA Collector-base breakdown voltage V (BR) CBO IC /G3d 0.1 mA, IE /G3d 0 300 /Gbe /Gbe V Collector-emitter breakdown voltage V (BR) CEO IC /G3d 1 mA, IB /G3d 0 300 /Gbe /Gbe V hFE (1) (Note) VCE /G3d 10 V, IC /G3d 20 mA 30 /Gbe 150 DC current gain hFE (2) V CE /G3d 10 V, IC /G3d 1 mA 20 /Gbe /Gbe Collector-emitter saturation voltage V CE (sat) I C /G3d 20 mA, IB /G3d 2 mA /Gbe /Gbe 0.5 V Base-emitter saturation voltage V BE (sat) I C /G3d 20 mA, IB /G3d 2 mA /Gbe /Gbe 1.2 V Transition frequency f T V CE /G3d 10 V, IC /G3d 10 mA /Gbe 70 /Gbe MHz Collector output capacitance C ob V CB /G3d 20 V, IE /G3d 0, f /G3d 1 MHz /Gbe 3 4 pF Note: h FE (1) classification R: 30~90, O: 50~150
/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE