2SA1708_09 SANYO

Document overview

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Technical content

Features

  • Adoption of FBET, MBIT processes.
  • High breakdown voltage, large current capacity.
  • Fast switching speed. Specifications ( ) : 2SA1708 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (- -)120 V Collector-to-Emitter Voltage VCEO (- -)100 V Emitter-to-Base Voltage VEBO (- -)6 V Collector Current IC (- -)1 A Collector Current (Pulse) ICP (- -)2 A Collector Dissipation PC 1W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current ICBO VCB=(- -)100V, IE=0A (- -)100 nA Emitter Cutoff Current IEBO VEB=(- -)4V, IC=0A (- -)100 nA DC Current Gain hFE VCE=(- -)5V, IC=(- -)100mA 100* 400* Gain-Bandwidth Product fT VCE=(- -)10V, IC=(- -)100mA 120 MHz Output Capacitance Cob V CB=(- -)10V, f=1MHz (13)8.5 pF Continued on next page. * : The 2SA1708 / 2SC4488 are classified by 100mA hFE as follws: Rank R S T hFE 100 to 200 140 to 280 200 to 400 www.semiconductor-sanyo.com/network 22509EA MS IM TC-00001859 / 93003TN (KT)/83098HA(KT)/4249MO, TS Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. SANYO Semiconductors DATA SHEET 2SA1708 / 2SC4488 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications

No.3094-2/5 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Collector-to-Emitter Saturation Voltage V CE(sat) I C=(- -)400mA, IB=(- -)40mA (- -0.2)0.1 (- -0.6)0.4 V Base-to-Emitter Saturation Voltage V BE(sat) I C=(- -)400mA, IB=(- -)40mA (- -)0.85 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=(- -)10μA, IE=0A (- -)120 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=(- -)1mA, RBE=∞ (- -)100 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10μA, IC=0A (- -)6 V Turn-ON Time t on See specified Test Circuit. (80)80 ns Strage Time t stg See specified Test Circuit. (700)850 ns Fall Time t f See specified Test Circuit. (40)50 ns Package Dimensions Switching Time Test Circuit unit : mm (typ) 7519-003 123 6.9 0.5 0.6 4.0 4.5 1.01.0 2.5 1.45 1.01.0 0.9 0.45 2.542.54 1 : Emitter 2 : Collector 3 : Base SANYO : NMP IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A ITR04323 2SC4488 --1.0 --0.8 --0.6 --0.4 --0.2 ITR04322 2SA1708 IB=0mA --1mA --2mA --15mA--10mA --5mA --3mA --20mA --25mA --30mA IB=0mA 1mA 3mA 2mA 5mA 20mA 15mA 10mA 25mA30mA 1.0 0.8 0.6 0.4 0.2 012 45 3 VR RL VCC=50VVBE= - -5V 10IB1= - -10IB2= IC=400mA (For PNP, the polarity is reversed.) + +50Ω INPUT OUTPUT RB 100μF4 7 0 μF PW=20μs IB1 IB2 D.C.≤1%

No.3094-3/5 Gain-Bandwidth Product, fT -- MHz fT -- IC fT -- IC Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A DC Current Gain, hFE hFE -- IC Collector Current, IC -- ACollector Current, IC -- A DC Current Gain, hFE hFE -- IC IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A IC -- VBE IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- mA IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- mA 100 2SA1708 VCE= --10V ITR04330 2SC4488 VCE=10V ITR04331 Ta=75°C 25°C --25°C 2SC4488 VCE=5V ITR04329 100 --0.01 1000 23 57 --0.172 3 5 7 --1.0 23 2SA1708 VCE= --5V ITR04328 Ta=75°C --25°C 25°C 2SC4488 VCE=5V --25 Ta=75 ITR04327 --25 Ta=75 2SA1708 VCE= --5V --1.2 --0.6 --0.8 --1.0 --0.2 --0.4 ITR04326 100 1.2 0.6 0.8 1.0 0.2 0.4 100 0.01 1000 23 57 0.172 3 5 7 1.0 23 ITR04325 2SC4488 ITR04324 2SA1708 IB=0mA --0.5mA --1.0mA --1.5mA --2.0mA --2.5mA IB=0mA 0.5mA 1.0mA 1.5mA 2.0mA 2.5mA --500 --400 --300 --200 --100 500 400 300 200 100 01 0 2 0 4 0 5 0 30

No.3094-4/5 VBE(sat) -- IC Collector Current, IC -- A Collector Current, IC -- A VCE(sat) -- IC Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Base-to-Emitter Saturation V oltage, VBE(sat) -- V Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- A VCE(sat) -- IC VBE(sat) -- IC Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- V Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V Cob -- VCBCob -- VCB Output Capacitance, Cob -- pF Collector-to-Emitter V oltage, VCE -- V A S O Collector Current, IC -- A Ambient Temperature, Ta -- °C PC -- Ta Collector Dissipation, PC -- W 1.0 0.1 0.01 57 2 5 37 21.0 10 25 37 100 ITR04338 ITR04337 ITR04339 --10 --1.0 ITR04336 2SA1708 IC / IB=10 2SC4488 IC / IB=10 1.2 1.0 0.8 0.6 0.4 0.2 100 140 120 1602006 0 40 80 2SA1708 / 2SC4488 Ta= --25°C 75°C 25°C IC=1.0A ICP=2.0A 100ms 10ms DC operation Ta= --25°C 75°C 25°C Single pulse Ta=25°C (For PNP, minus sign is omitted.) ITR04335 Ta=75°C --25°C 25°C 2SC4488 IC / IB=10 --1000 --100 ITR04334 Ta=75°C --25°C 25°C 2SA1708 IC / IB=10 0.0172 2 3 57 2 3 57 0.1 1.0 1000 100 1.0 0.0172 3 7 52 3 7 520.1 1.0 2SA1708 / 2SC44881ms 2SC4488 f=1MHz 100 --10 --100--1.0 5772 3 5 7 22 3 ITR04332 2SA1708 f=1MHz ITR04333 100 10 1001.0 5772 3 5 7 22 3

No.3094-5/5 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of February, 2009. Specifications and information herein are subject to change without notice.