2SA1707_12 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 8

Technical content

Features

  • Adoption of FBET, MBIT processes • Large current capacity, wide ASO
  • Low collector-to-emitter saturation voltage • Fast switching speed ( )2SA1707 Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (- -)60 V Collector-to-Emitter Voltage V CEO (- -)50 V Emitter-to-Base Voltage V EBO (- -)6 V Collector Current I C (- -)3 A Collector Current (Pulse) I CP (- -)6 A Collector Dissipation P C 1W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7540-001

82912 TKIM TC-00002801/93003TN (KT)/83098HA(KT)/6299MO, TS

PNP/NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications http://www.sanyosemi.com/en/network/ Product & Package Information

  • Package : NMP(Taping)
  • JEITA, JEDEC : SC-71
  • Minimum Packing Quantity : 2,500 pcs./box Marking(NMP(Taping)) Electrical Connection1 : Emitter 2 : Collector 3 : Base SANYO : NMP(Taping) 6.9 321 2.5 1.051.45 2.542.54 1.0 0.6 0.45 0.5 0.9 4.5 1.01.0 15.0 2SA1707S-AN 2SA1707T-AN 2SC4487S-AN 2SC4487T-AN A1707 LOT No.RANK C4487 LOT No.RANK 2SC4487 2SA1707

No.3093-2/8 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB=(- -)40V, IE=0A (- -)1 μA Emitter Cutoff Current I EBO VEB=(- -)4V, IC=0A (- -)1 μA DC Current Gain hFE1V CE=(- -)2V, IC=(- -)100mA 140* 400* hFE2V CE=(- -)2V, IC=(- -)3A 35 Gain-Bandwidth Product f T VCE=(- -)10V, IC=(- -)50mA 150 MHz Output Capacitance Cob V CB=(- -)10V, f=1MHz (39)25 pF Collector-to-Emitter Saturation Voltage V CE(sat) IC=(- -)2A, IB=(- -)100mA Base-to-Emitter Saturation Voltage VBE(sat) (- -)0.95 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=(- -)10μA, IE=0A (- -)60 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=(- -)1mA, RBE=∞ (- -)50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10μA, IC=0A (- -)6 V Turn-On Time t on See specifi ed Test Circuit. 70 ns Storage Time t stg (450)650 ns Fall Time t f 35 ns * : The 2SA1707/2SC4487 are classifi ed by 100mA hFE as follows : Rank S T hFE 140 to 280 200 to 400 Switching Time Test Circuit

Ordering Information

Device Package Shipping memo 2SA1707S-AN NMP(Taping) 2,500pcs./box Pb Free 2SA1707T-AN NMP(Taping) 2,500pcs./box 2SC4487S-AN NMP(Taping) 2,500pcs./box 2SC4487T-AN NMP(Taping) 2,500pcs./box VR RL VCC= - -25VVBE=5V IC=10IB1= - -10IB2= - -1A + +50Ω INPUT OUTPUT RB 100μF 470 μF PW=20μs IB1 IB2 D.C.≤1% VR RL VCC=25VVBE= - -5V IC=10IB1= - -10IB2=1A + +50Ω INPUT OUTPUT RB 100μF 470 μF PW=20μs IB1 IB2 D.C.≤1% 2SC44872SA1707

No.3093-3/8 IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- ADC Current Gain, hFE hFE -- IC Collector Current, IC -- ACollector Current, IC -- A DC Current Gain, hFE hFE -- IC IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A IC -- VBE IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A ITR04305 2SC4487 --5 --4 --3 --2 --1 ITR04304 2SA1707 IB=0 --5mA --20mA --10mA --50mA--100mA --200mA IB=0 5mA 10mA 20mA 40mA60mA80mA 100mA ITR04307 2SC4487 ITR04306 2SA1707 IB=0 --2mA --4mA --6mA --8mA --12mA --10mA --14mA IB=0 1mA 2mA 3mA 4mA 5mA 6mA 8mA 7mA --2.0 --1.6 --1.2 --0.8 --0.4 2.0 1.6 1.2 0.8 0.4 048 1 6 2 0 12 Ta=75°C 25°C --25°C 2SC4487 VCE=2V ITR04311 100 --0.01 1000 23 557 --0.172 3 5 7 --1.0 25 3 2SA1707 VCE= --2V ITR04310 Ta=75°C --25°C 25°C 2SC4487 VCE=2V --25 25°C Ta=75 ITR04309 --25 Ta=75 2SA1707 VCE= --2V --3.6 --2.4 --2.8 --3.2 --0.4 --0.8 --1.2 --1.6 --2.0 ITR04308 3.6 2.4 2.8 3.2 0.4 0.8 1.2 1.6 2.0 100 0.01 1000 23 557 0.172 3 5 7 1.0 25 3

No.3093-4/8 Gain-Bandwidth Product, fT -- MHz fT -- IC fT -- IC Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A VBE(sat) -- IC Collector Current, IC -- A Collector Current, IC -- A VCE(sat) -- IC Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Base-to-Emitter Saturation V oltage, VBE(sat) -- V Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- A VCE(sat) -- IC VBE(sat) -- IC Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- V Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V Cob -- VCBCob -- VCB Output Capacitance, Cob -- pF 2SC4487 f=1MHz 100 ITR04314 2SA1707 f=1MHz 100 1000 2SA1707 VCE= --10V ITR04312 2SC4487 VCE=10V ITR04313 ITR04315 100 1000 325 7 3 25 70.01 0.1 321.0 100 10 1001.0 5723 5 7 23 ITR04319 --10 --1.0 --0.01752 3 7 52 3 7 52 5 3--0.1 --1.0 ITR04318 2SA1707 IC / IB=20 2SC4487 IC / IB=20 Ta= --25°C 75°C 25°C Ta= --25°C 75°C 25°C ITR04317 Ta=75°C --25°C 25°C 2SC4487 IC / IB=20 --0.0157 5 23 5 7 --0.1 23 23 57 --1.0 --1000 --100 --10 ITR04316 Ta=75°C --25°C 25°C 2SA1707 IC / IB=20 0.0157 3 223 5 7 23 5 5 70.1 1.0 1000 100 1.0 0.01752 3 7 52 2 37 55 30.1 1.0

No.3093-5/8 1.0 0.1 0.01 23 5 7 2 5 37 2 5 371.0 10 ITR04320 2SA1707 / 2SC4487 ITR04321 1.2 1.0 0.8 0.6 0.4 0.2 100 140 120 1602006 0 40 80 2SA1707 / 2SC4487 IC=3.0A ICP=6.0A 1ms 100ms 10ms DC operation Collector-to-Emitter V oltage, VCE -- V A S O Collector Current, IC -- A Ambient Temperature, Ta -- °C PC -- Ta Collector Dissipation, PC -- W Single pulse Ta=25°C (For PNP, minus sign is omitted.)

No.3093-6/8 Bag Packing Specifi cation 2SA1707S-AN, 2SA1707T-AN, 2SC4487S-AN, 2SC4487T-AN

No.3093-7/8 Outline Drawing 2SA1707S-AN, 2SA1707T-AN, 2SC4487S-AN, 2SC4487T-AN Mass (g) Unit 0.275 * For reference mm

PS No.3093-8/8 This catalog provides information as of August, 2012. Specifi cations and information herein are subject to change without notice. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.