2SA1706 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

. Adoption of FBET,MBIT processes. - Large current capacity and wide ASO. + Low collector-to-emitter saturation voltage. + Fast switching speed. ( ): 2SA1706 Absolute Maximum Ratings at Ta= 25°C unit Collector to Base Voltage Vcso (-)60 Vv Collector to Emitter Voltage VcEro (—)50 Vv Emitter to Base Voltage VEBO (6 V Collector Current Ic (-)2 A Collector Current(Pulse) Icp (-44 2A Collector Dissipation Po 1 Ww Junction Temperature Tj 150 °C Storage Temperature Tstg —55to+150 °C Electrical Characteristics at 'Ta=25°C min typ max unit Collector CutoffCurrent Icgo Vop=(—)50V In=0 (—)100 nA Emitter CutoffCurrent Ippo Vep=(—)4V,Ic=0 (—)100 nA DC Current Gain hreQ@) = Vog=(—)2V,Io=(—)100mA 100% 400% hpg(2) = Vor=(-)2V,Ic=(—)1.5A 40 Gain-Bandwidth Product fy Vor =(-)10V,I¢=(—)50mA 150 MHz C-E Saturation Voltage Vorsat) Ic=(—)1A,Ip=(—)50mA (-0.3)0.15 (-0.7)0.4 v B-E Saturation Voltage Vprisat) Ic=(—)1A,Ip=(—)50mA (-)0.9 (-)1.2 v Output Capacitance Cob Vop=(—)10V,f=1MHz (22)12 pF Continued on next page. % : The 25A1706/2SC4486 are classified by 100mA hgg as follows :

140 S280

(unit: mm ) “ er harks |: & c 8 0.45 E; Emitter B: Base 256 2.54 SANYO: NMP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN - 6249MO,TS No.3026-1/4

2SA1706/2SC4486 : —SSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSFss Continued from preceding page. min typ max unit C-B Breakdown Voltage Viprycpo Ic=(—)10pA,Ip=0 (—)60 Vv C-E Breakdown Voltage Vipryceo I¢=(—)1mA,Rpg= © (—)50 v E-B Breakdown Voltage VpryeBo Ie=(—)10pA,Ic=0 (-)6 Vv Turn-ON Time ton See specified Test Circuit. 60 ns Storage Time tstg ” (450)550 ns Fall Time tr a 30 ns Switching Time Test Circuit le OUTPUT INPUT 2! RB (FP ° 2 RL PW=20us a DCS 1% a yit—o 100 470p Voc =25V é Vee =— 5V Unit(Resistance : 2 , Capacitance : F) (For PNP, the polarity is reversed.) “a4 Ic — Voce be Ic = Vce I 2-16 a 2 6 Z| as | nN Pi Ve if g £ g- ES = 8mA g A pas re =6mA ra ‘a f(A Ze =e B-o8 en els Boe oop 5 ol Wao =2mA ole 2a \\| 2 ee A i ee Xe °5 Os 08 V2 16 2.0 24 Collector to Emitter Voltage,Vog — V Collector to Emitter Voltage,Vcg — V

7 Io = VCE Ic = Vee

0} 4 | ro aod patos | hee lia Pi] PREF? 5-06 = 3mA 50.6 TASS CESS | ae oc ae! sof | | te | a AE | ‘TT im ; PP Oo -2 ry i °% 2 % 6 8 0 wz Collector to Emitter Voltage,Vog — V Collector to Emitter Voltage,Vcg — V No.3026-2/4

24 Ic — VBE te Ic — VBE

R=TT LL) TeTILLoO Be) ee ie eee) r/o) 3 xy fe eT 4. TO oh? Sa Ai, nr) 12 Base to Emitter Voltage,Vaz — V Base to Emitter Voltage Vas -Vv hre — Ic hre — Ic 1000; 1000, asarros] [| TTT [| TL] ft] ecw l iti Tr) vere TTP very T_T] £ [ere Lt | ee ee pa SSSR 3 eee PaCS allan \\. z mA Et tt tit | TL ITN ST TN See Se SST HEHEHE Pt aad Collector Gueventle — A ” Collector Currentilg — A fr - Ic 100 ft - Ic ha I] Peo TTT TP Trt

2 Here tH} TH og pase EE

ame Li] 3 TPNH ao Rect TAL 3” pee aN OP RSS | RST 2 & A it ttt z i HHH HY F J tt ttt Tet BL Ty et TT ‘= Collector Currentitg _ ma ° Collector Current lg - mA Cob — VcB 100 Cob — VcB Fett oo). f=1MHz te t= Hz. ‘s < Pet Tt ty Torr ft [| ro ee SE oS Te Ee 3” 8 MAL ld OO } [Pit eK a a ” Collector to Base Voltage,Vog— Vo , Collector to Base Voltage, Vcg — V No.3026-3/4

00 Voe(sat) — Ic 1000 Vce(sat) — Ic

p zeae T TTT TTT } esceesel TTT TT TTT TI 3 ina t+ HH /7 3d Port 4 jot fi) wit Ter yar = 3 2° 4 é | [| | PTA Hy Hi > > ALOU ea 33 7 33 Y 5S 51S ee er oo ee > ane oz git TT yy =s 7 Ss 4 lg a eA 22 {J Pee TH 22 | eter TTT Sa 8a on oi Ti TT eT £0.01 0.1 “1.0 0.01 or 1o Collector Gurrentlg — A Collector Current,g — A

40 Vee(sat) — Ic Vee(sat) — Ic

2841706} 2804486 > pate LTTE TTT 1 . ceased TTT TT TTT i Pitt Try 1 Jf Pet TET 3 2 Al TUT TTT 3 U BBRIanE a > el PT Tg SP Ae} Ba gs 33 2> g 2 AA = 82-10 tos E§ 10 = rd se el ast a ge | 33 fT 23 aie [ott Ty) gs Pty a ‘ i cncnnd dH PT TT 0.01 703 7.0 1 a 10 Collector Current,lg — A Collector Currentlg — A ASO 12 Po — Ta stor | fF FEF asarroer2scaas “| 28a1706/2804486 Pee NRT of 1,0) pee PEN g ol S Y _ PoE SNES CCN £ [t 0 Ne NX g +L TT Se! Ne g oS ‘ a 3 sol PT TN NT 3 r++} + BRS 04 PerereSee RCO TDS So tse | TP PT ONT 302 S A Single pulse |_| | | PoaN NX oo|(FORPNP,minussignisomutted) | | | 5 N 10 0 ° 20 40 60 80 100 120 140160 Collector to Emitter Voltage, Voz — V Ambient Temperature,Ta — °C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. WM Anyone purchasing any products described or contained herein for an above-mentioned use shall: © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally, Hi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.3026-4/4