2SC4480 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

Features

  • Large current capacity + Adoption of MBIT process - High DC current gain + Low collector-to-emitter saturation voltage - High Vezo Absolute Maximum Ratings at Ta = 25°C unit Collector to Base Voltage Voso 30 Vv Collector to Emitter Voltage VcEo 25 Vv Emitter to Base Voltage VEBo 15 Vv Collector Current Ic 2 A Collector Current(Pulse) Icp 4 A Base Current Ip 0.4 A Collector Dissipation Po 1 Ww Junction Temperature Tj 150 °C Storage Temperature Tstg —55to+150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Icgo Vcop=20V,Ip=0 100 nA Emitter Cutoff Current Igpo Ves=10V,Ic=0 100 nA DC Current Gain hpg(1) Vor=5V,I¢=500mA 800 1500 3200 hpe(2) Vog=5V,Ic=1A 600 Gain-Bandwidth Product fr Vcog=10V,Jco=50mA 260 MHz Output Capacitance Cob Vop=10V,f=1MHz 27 pr C-E Saturation Voltage Vorat) Ig=1A,.Jg=20mA 015 05 V B-E Saturation Voltage Vepisaty I¢=1A,Ip=20mA 085 12 V C-B Breakdown Voltage Vesrycgo I¢=10pA,Ig=0 30 v C-E Breakdown Voltage Vierceo Ic=1mA,Rgg=° 25 v E-B Breakdown Voltage Viereso Ip=10pA,Ic=0 15 Vv Turn-ON Time ton See specified Test Circuit. 0.14 ps Storage Time tstg ” 1.85 ps Fall Time te a 0.1 us Switching Time Test Circuit Package Dimensions 2064 a output (unit: mm) “ : INPUT 2 > © A - i m = ) . 6 r oly 4 4 3 | 10% | <7op] VBe™-5V Vor =10¥ nat Ds Ei . 100133 = - 100lg2 = I¢= 700mA j—{fosll [fo ~ Unit(Resistance : 9 , Capacitance : F) ec B fEI a) =: Emitter B: Base 25h 2.54 SANYO: NMP ' SANYO Electric Co.,Ltd. Semiconductor Business Headquarters . TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN N149MO,TS No.3234-1/3

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e 1 #52 12 Po = Ta eel ft IN < yo ee NA | || = 10 oe a Lo ee | g NX Ss g ITT Neo [TANT 3 IN é 4+ { 1 Se) i[ ANT | Eos : 3 t+ HH 3 BeeeNG |_| Zo 1 of TT ANT ge NI Ce IN || oS 802 IN yt=rrol | TT TNT Pt tt TING 3, Single pulse oe 0 N 1.0 10 35 0 20 40 60 80 100 120 10 160 Collector to Emitter Voltage, Vog — V Ambient Temperature,Ta ~ °C HI No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. @ Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: . @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Wi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ee No0.3234-3/3