2SC4478 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor 2SC4478
DESCRIPTION
- Fastswitchingspeed
- NPNepitaxial planarsilicon transistor
- 100% avalanche tested
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- High deflection CRTdisplay
- Horizontaldeflection outputapplications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 400 V VCEO Collector-EmitterVoltage 200 V VEBO Emitter-BaseVoltage 6 V IC CollectorCurrent-Continuous 7 A IB BaseCurrent-Continuous 4 A PC CollectorPowerDissipation @TC=25℃ 30 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor 2SC4478 ELECTRICALCHARACTERISTICS Tj=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=25mA;IB=0 200 V VCE(sat) Collector-EmitterSaturationVoltage IC=5A;IB=0.5A 0.8 V VBE(sat) Base-EmitterSaturationVoltage IC=5A;IB=0.5A 1.5 V ICBO CollectorCutoffCurrent VCB=250V;IE=0 100 μA IEBO EmitterCutoffCurrent VEB=5V;IC=0 100 μA hFE-1 DCCurrentGain IC=1A;VCE=1V 15 hFE-2 DCCurrentGain IC=5A;VCE=1V 10 50 fT Current-Gain—BandwidthProduct IE=-0.5A;VCE=10V 40 MHz