2SA1696 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Features
- High fp: £p = 500MHz - High breakdown voltage : Vogo=120Vmin - Small reverse transfer capacitance and excellent high frequency characteristic : cre= 2.7pF/NPN, 4.0pF/PNP, - Complementary PNP and NPN types. + Adoption of FBET process. - Micaless type. ( ): PNP Absolute Maximum Ratings at Ta= 25°C unit Collector-to-Base Voltage Veso (—)120 Vv Collector-toEmitter Voltage Vcro (—)120 v Emitter-to-Base Voltage VrBo (-)3 Vv Collector Current Ic (-)400 mA Peak Collector Current icp (-)600 mA Collector Dissipation Po 18 Ww Te=50°C 10 WwW Junction Temperature Tj 150 °C Storage Temperature Tstg -55to+150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Icpo —- Veg =(—)80V,Ip=0 (-)0.1 pA Emitter Cutoff Current Ippo Vep=(—)2V,I¢=0 (-)1.0 pA DC Current Gain bpp) Vor=(—)10V,I¢=(—)50mA 40% 320% hrg2 = Vog=(—)10V,I¢=(—)200mA 20 Gain-Bandwidth Product fp Voe=(-)10V,Jo=(—)50mA 400 MIIz Output Capacitance Cob Vop=(—)30V,f= 1MHz 3.1 pF . (4.4) pr Reverse Transfer Capacitance cre Vos =(—)30V,f= 1MHz 2.7 pr (4.0) pr C-E Saturation Voltage Voreat) I¢=(—)50mA,Ip=(—)5mA (-)1.0 v E-B Saturation Voltage VaE(sat) I¢=(—)50mA,Ip=(—)5mA (-)1.0 v xhpp : The 25A1696/2SC4473 are classified by 50mA hpgas follows :
40 C 80 GO D 120 100 E 200 160 F 320
Package Dimensions 2041 ke 6.07 14.0 2b (unit : mm) 35. eee e U6 ———s ® s | = an " 18.) —— | LOZ8
7.2 E: Emitter
“ Cc: Collecter ‘ i 07 B: Base al SANYO: TO220ML SANYO. Electric Co.,Ltd. Semiconductor Business Headquarters . TOKYO OFFICE. Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 4249MO,T'S No.3017-1/4
“m0 Ic — VcE 20 Ic — VcE asaroos TT] Tf TT] [ soe | etree TT] ead | eo) Ler he 2 pt tk | 2 nl feet im | |_| A fant a 5 Zs | toma | \\.| feet oY Zoe : (aa a! Geena Sn ee ee) (ae Amami & paar | | eT of eet a Collector-to Emitter Voltage,Vog — V Collector-to Emitter Voltage.Von — v * ' Ic — VBE Ic — VBE a 300 —— — 300 Voe=10V B70 — A 20 Base+to-Emitter Voltage, Vg — V Base-to- Emitter Voltage, Vpp — V hre — Ic hee — Ic evo Lt | etl tt tit | 4 [ | ptt AN £fUt7 TP TT iN 3 [| [| [jy 3 HHH | A 1 fo \\| rH ttt TIN S| Ho HY Po PLL TELE ® 10 if jp af -E EY ee mou Peat ee Collector Current,Ic — mA Collector Current,I¢ aN 1000 fr - Io 100, ft - Ic 2 10] ter e {iT [TU] me = — py S = _ it fy 1 Put TIN FL eT
2 A \\ 2 AC
8 [7 3 Bp Eilat i tit oN elicit yA ale) a 3 3 FE 400 | | é 100 iti TTT iy Tl eitr [TT ity Ty StH Sse , 4 “10 AO * 10 100, | Collector Currentg — mA Collector Currentjlg — mA No.3017-2/4
Cob ~ VcE | [i] Baise iT] [TTT cies es DOSE PC 7c Se ! a é [1] i a4 =H LH Bo PSS og Co 5 mS § oe =| PCHERELE PSY Ee 7 to? “OI aan POPC, sEeEEER HES + g | 10 1.0 1 Ven -V 9 cohector-to Base Voltage,Vey ~ V Collector todos ve Ness cp cre — VcB - * | [| sarees * TTT TT
1 LH ry g¢jJit Tr
: Pag Ese : Ss D8 Meee se £ ~S a ; PPE] a iT tt : 7 g' Coole § ‘| > : | ile HH AE-+}-- 4 = ' i CP a Sra at yo” > Collector.to-Base Voltage,Von — V Collector-to- Base Voltage, Veg — vos tee Vce (sat) — Ic 0 = ppp a, SPEER re > 4 io/le=10 i —_ g SCOT Pore ee] ra 55" L- aoe | se ee Cre a Coe aS CZ es Co HI gE. | ge, [i] tl ito eet fT et 22 el | =A ro J 190 : - % a an “Collector Currentlg nA Collector Current,lg — mA Comet AS O ; ‘0 [ | 2sareoevascaa7s 2.0 [yt] 2SA1696/2804473 feo} We <s << » oO eT NT ee CN Yee Poet ENG 2 oS 8 [For PNP, minus sign is omitted. | af 3 an oa q Te=25°C Slee | ain 5 20 40 60 60 100 120° 140 «160 " Coll orto Emitter Voltage.Vcr %y Ambient Temperature,Ta — °C ° No.3017-3/4 _______Gallectortoimitter Voltage Ver = Vo Ambient Temporataresta ="
ee SSSSSSSSSSSSSSSSSsSSSSSSSSSSSsSSSSSSSSSsFesssssSSSS
1 Pe - Ta
L || 2SA1696/2S04473 = 10] can x Pa %, £. IN, 3 Ne 8 Cn 2 Ne : Pty ys 8 2 _ itp ts Oo” 20 Ww 60 80 +10 120 m0 160 Ambient Temperature,Ta — °C HENo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss HM Anyone purchasing any products described or contained herein for an above-mentioned use shall: © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, a eeeSSSSSSSsSSSSSSsSSSSSSSSSSSsSSSSSSSSSSSSSSSSSSSSe No.3017-4/4