2SC4459 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
- High breakdown voltage, high reliability + Fast switching speed - Wide ASO - Adoption of MBIT process + Micaless package facilitating mounting Absolute Maximum Ratings at Ta = 25°C unit Collector-to Base Voltage Vcso 800 Vv Collector-toEmitter Voltage Voro 500 Vv Emitter-toBase Voltage VEBO q Vv Collector Current Ic 10 A Peak Collector Current icp PWS 300us,duty cycleS 10% 20 A Base Current Ip 3 A Collector Dissipation Po 3 WwW Te=25°C 50 WwW Junction Temperature Tj 150 °C Storage Temperature Tstg -65to+150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current IcBo Vcop=500V,Ip=0 10 yA Emitter Cutoff Current Ippo Vep=5V,Jc=0 10 vA DC Current Gain bre) Veg=5V,Ip=0.8A 15K 50% hpg(2) Vop=5V,Ic=4A 8 Gain-Bandwidth Product fp Vop=10V,I¢=0.8A 18 MHz Output Capacitance Cob Vop=10V,f=1MHz 50 pF C-E Saturation Voltage Vertsat) Ic=4A,1g=0.8A 1.0 v B-E Saturation Voltage VeEtat) Ic=4A,[p=0.8A 15 Vv C-B Breakdown Voltage Veerycpo I¢=1mA,Ip=0 800 Vv : C-E Breakdown Voltage Veerceo Ic=5mA,Rpp= © 500 v E-B Breakdown Voltage VipryeBo Ig=1mA,I¢=0 7 Vv C-E Sustain Voltage Vorxisus) 1¢=3.5A,Ip1 = —Igo=1.4A, 500 v L=500zH,clamped Continued on next page. * : For the hpgyy of the 25C4459, specify two ranks or more in principle.
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Package Dimensions 2039A rT eae 7 20-4 as (unit: mm) 2 0 in — << a cl Oe camermt i= 31A beet fl pat 18 abe E: Emitter C: Collector e B: Base poo Pt SANYO: TO3PML SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Blidg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 7190MH, TA(KOTO) No.3330-1/3
25¢4459 eee Continued from preceding page. min typ max unit Turn-ON time ton Voc=200V, 0.5 ys Storage Time . tstg 5Ip) = —2.5Ipo=Ic=5A, 3.0 ys Fall Time te Ry = 400. 03 ys Switching Time Test Circuit Bus Oee si. eS . opt Plat = VRP 109 1p | 4 vase 8V Nec Sa00¥ Unit (resistance: 9, capacitance: F) Ic_= Vee Ic_~ VBE 12) WZ [TT Ty yy TT [| tT yt yy TT verssy] ‘0 ey 0 He} A < } Lo er < LTP TPT yy i es ee eet PP AT
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So) HE SAT 3 alte F ‘hoot Coo] Tepe TSS 1 om tea aaa Sei putse EE . Sov |= 25°C a 2joingle pusey Tr ol nV \\ec=20v [T= 25°C 10 100 woo 10 100 1000 Collector-toEmitter Voltage,Vcg — V Collector-to- Emitter Voltage, Vog — V Ren(ty - Pc - Ta 10 5 60 Po sy Poe Ee esi t | ity Pri ; 50 8 ooo 6 LINE Ty Fo ee 21.0 at] a8 NNO sCTPTe ee 3 4 aot teetie & IH all Tt SB { [TT We. [| Eo ae py ee ee ee See a a a @g itt Ty i ee ot _ | | ToT PT NX] = on 1.0 10 100 1000 0 2 40 60 8 100 120 100 150160 Time,t - ms Ambient Temperature,Ta - °C . No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. M Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. W Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. “SANYO believes information herein is acourate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. a No.3330-3/3