2SA1687 SANYO
Document overview
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Technical content
SANYO PNP/NPN Epitaxial Planar Silicon Transistors " Low-Frequency General-Purpose Amp Applications Features . . Very small-sized package permitting the 25A1687/2SC4446-applied sets to be made small and s}im - High Vepo ( ): 2SA1687 . Absolute Maximum Ratings at Ta = 25°C unit Collector to Base Voltage Vocso (—)60 Vv Collector to Emitter Voltage Vcgo (-)50 Vv Emitter to Base Voltage Vso (-)15 v Collector Current Ic (-)150 mA Collector Current(Pulse) Icp (-)300 mA Base Current Ip (-—)30 mA Collector Dissipation Po 150 mW Junction Temperature Tj 150 °C Storage Temperature Tstg —55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit Collector CutoffCurrent Icgo Vop=(—)40V,Ip=0 (-)0.1 pA Emitter Cutoff Current TEBO Vep=(—)10V,Ic¢=0 (-)0.1 pA DC Current Gain hpg Vor=(—)6V,Ico=(—)1mA 135% 600% Gain-Bandwidth Product fr Vee=(-)6V,I¢=(—)imA 130 MHz C-E Saturation Voltage Vereat) Ic=(—)50mA,Ip=(—)5mA (~0.25)0.15 (—)0.5 v B-E Saturation Voltage VexEisat) Ic=(—)50mA,Ip=(—)5mA (-)0.85 (—)1.2 v C-B Breakdown Voltage VisrycBo Ic=(—)10pA,Ig=0 (-)60 v C-E Breakdown Voltage Visryceo = I¢=(—)1mA,Rpg=2 (—)50 v E-B Breakdown Voltage Vesryeso Je=(—)10pA,Ic=0 (—)15 Vv Output Capacitance Cob Vos=(—)6V,f=1MHz (3.5)2.2 pr Turn-ON Time ton See specified Test Circuit. 50 ns Storage Time tetg a (460)590 ns Fall Time ty a . (60)110 ns %: The 2SA1687/2SC4446 are classified by lmA hrgas follows : 135 5 270 200 6 400 300 7 600 Marking : D (2SA1687) hpg rank : 5,6,7 H (28C4446) Package Dimensions 2059 - (unit : mm) Switching Time Test Circuit = 25 ne = a OUTPUT = pw=2us |Y*S ) RL an: a oest% Fs | nS T atop [ary] [iy 1 q | VBE=—5V Voo=20V 10lg1=—10la2=10=50mA ANYO! MOP (For PNP, the polarity is reversed.) oy sano Unit (Resistance : 2, Capacitance : F) . 22 E: Emitter SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 5189MO,TS No.3013-1/4
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2SA1687/2SC4446 : Sw SSS Po - Ta 160 oe = 140 y Fo | NT TTT 1 120 \\ Sol | [NT PTT ‘¢ 100 Ss gel | IN Tt ® 60 s Jeo HS |_| a 3 40 7 PCERE-ARE ee 0 N 0 20 40 6 8 100 120 140 160 Ambient Temperature,Ta — °C BM No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and - the like, the failure of which may directly or indirectly cause injury, death or property loss. MI Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD,, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. WM Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of ' third parties. en No.3013-4/4