2SC4446 KEXIN
Document overview
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Technical content
Features
High VEBO. NPN Epitaxial Planar Silicon Transistor 2SC4446 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 60 V Collector-emitter voltage V CEO 50 V Emitter-base voltage V EBO 15 V Collector current I C 150 mA Collector current(Pulse) I CP 300 mA Base current I B 30 mA Collector dissipation P C 150 mW Junction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0
www.kexin.com.cn2 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current I CBO VCB = 40V, IE=0 0.1 ìA Emitter cutoff current I EBO VEB = 10V, IC=0 0.1 ìA DC current gain h FE VCE =6 V,I C = 1mA 135 600 Gain bandwidth product f T VCE =6 V,I C = 1mA 130 MHz Collector-to-emitter saturation voltage V CE(sat) IC = 50mA , IB = 5mA 0.15 0.5 V Base-to-emitter saturation voltage V BE(sat) IC = 50mA , IB = 5mA 0.85 1.2 V Collector-to-base breakdown voltage V (BR)CBO IC = 10ìA , IE =0 6 0 V Collector-to-emitter breakdown voltage V (BR)CEO IC =1 m A,RBE = 50 V Emitter-to-base breakdown voltage V (BR)EBO IE = 10ìA , IC =0 1 5 V Output capacitance C ob VCB = 6V, f = 1MHz 2.2 pF Turn-on time ton 50 ns Storage time tstg 590 ns Fall time tf 110 ns 2SC4446 hFE Classification Marking Rank 5 6 7 hFE 135 270 200 400 300 600 H