2SC4441 SANYO

Document overview

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Technical content

Features

+ High reliability(Adoption of HVP process). - High fast. . - High breakdown voltage. - Wide ASO. - Adoption of MBIT process. - Micaless package facilitating mounting. Absolute Maximum Ratings at Ta= 25°C . unit Collector to-Base Voltage Vocso 600 Vv Collector-to-Emitter Voltage Voro 400 v Emitter-toBase Voltage VEBO 7 Vv Collector Current Ic 10 A Peak Collector Current icp PWS 300zs, Duty CycleS 10% 20 A Collector Dissipation Po 2.0 WwW Te= 25°C 35 WwW Junction Temperature Tj 150 °c Storage Temperature Tstg -55to+150 °C Electrical Characteristics at Ta = 25°C min typ max unit Collector Cutoff Current IcBo Vop=400V Ip=0 10 yA Ices Vor=600V 0.6 mA Collector Sustain Voltage VeEo(sus) Ic=100mA,Ig=0 400 Vv Emitter Cutoff Current IgBo Vep=5V,Ic=0 1 mA C-E Saturation Voltage Vorisat) Ic=6A,Ig=1.2A 0.8 Vv B-E Saturation Voltage Vax(sat) Jo=6A,[p=1.2A 1.5 v DC Current Gain hrgay Vor =5V,Io=1.2A 15 hrg@) Vor=5V,Ic=6A 10 20 Gain-Bandwidth Product fp Vor=10V,Ig=1.2A 20 MHz Storage Time tetg | Ic=7A,Igl=1.4A 3.0 ys Fall Time te Ip2= —2.8A,R, = 28.60. 02 ys (Voc=200V Package Dimensions Switching Time Test Circuits (unit: mm ) 2041 PW=2018 pesgsx 6.0 14.0: 2h fr 781 Ras output : ia Tae I INBUT] GS) a Ue Lele 4 vae 3 &) sc wn . . 7.24 E: Emitter VBE=-5V Vcc=200v 2 C: Collecter Avooeo * i 07 B: Base : ce SANYO: TO220ML Unit (resistance:Q, capacitance:F) SANYO Electric Co.,Ltd. Semiconductor Business Headquarters . TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 1101MH,KOTO 8-3497 No.3794-1/3 ,

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i gene _ COC Secetee Co a ia ee Coen ‘Aan = CO ° Collectorso Emitter Voltage.Vee -v Base-toEmitter Voltage,Vagon) — V 100 hee - Ic — te Stoo winks ITT TE TT Te) TTT | pe 9 ee A oe 3 i + a pose $F III NE fs CEE g4 S] ea 2 <0, ry \\ S Fol | fet os Perr PN a tr TOT, °° Ee o Collector Currentig -A . ; Gana Coser 7 ‘ Vee(sat) - Ic 10 - _— ee *. Poo * PSS i PHEETHHH a CRS i i) SEH ESS eerste RA COS 3 —— ae 5) a | 0 t . Collector Current,Ig — A Collector Currentlg — A Forward Bias ASO Reverse Bias ASO Ee | a SN TT XU Ip?==1. < SACRA PX ef tN oe og A ) 1 an PTT 2 Japaccaia 7 ESA COPS EEE s ftit & A a os PONT i a Sel + HN 8 | SEA pee SEA , GcllectortoEmitter Voltage, Voz /V “ Collector-toEmitter Siistain Voltage, Vogxieis) — V : No.3794-2/3

—). SSS . _ - Ta ; TTD s : wt TTT TTT aN vat [NOT ers ‘ gu | INI TT 3. NG 3% @ Fy Ne Fe VA q 12 Naz 3 Fs) NA ! SORE) BOE Re TT Py y ae N iq | JT | NUT 3 3 ou . ee ° IN A 0” 2040 60. 80 100 120 10 160 0 20 40 60 860100 120 140 160 Ambient Temperature,Ta — °C Ambient Temperature,Ta — °C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: : ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO. LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. . W Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, eee No.3794-3/3