2SC4417 PANASONIC

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Technical content

Silicon NPN epitaxial planer type For intermadiate frequency amplification of TV image n Features l High transition frequency fT. l Satisfactory linearity of forward current transfer ratio hFE . l S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Emitter EIAJ:SC–70 3:Collector S–Mini Type Package 2.1–0.1 1.3–0.10.9–0.1 0.7–0.1 0.3 +0.1 –0 0.15 +0.1 –0.05 2.0–0.2 0.650.2 0.65 0 to 0.1 0.2–0.1 Symbol V CBO V CEO V EBO IC PC Tj Tstg Ratings 150 150 –55 ~ +150 Unit V V V mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Common emitter reverse transfer capacitance Symbol ICEO V CBO V CEO V EBO hFE V CE(sat) fT C re Conditions V CE = 20V , IB = 0 IC = 10mA, IE = 0 IE = 1mA, IB = 0 IE = 10mA, IC = 0 V CB = 10V , IE = –10mA IC = 20mA, IB = 2mA V CB = 10V , IE = –10mA, f = 200MHz V CB = 10V , IE = –1mA, f = 10.7MHz min typ 500 max 100 0.5 1.5 Unit mA V V V V MHz pF Marking symbol :2Z

PC — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IE C ob — V CB C re — V CE 0 160 40 120 80 14020 100 60 240 200 160 120 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 01 0 826 4 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA Collector to emitter voltage VCE (V) Collector current IC (mA ) VCE =10V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 IC /IB=10

Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 120 100 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 600 500 400 300 200 100 VCB =10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 3.0 2.5 2.0 1.5 1.0 0.5 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 1 3 10 30 100 2.4 2.0 1.6 1.2 0.8 0.4 IC =1mA f=10.7MHz Ta=25˚C Collector to emitter voltage VCE (V) Common emitter reverse transfer capacitance Cre (pF)