2SA1683 SANYO
Document overview
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Technical content
Features
- Adoption of FBET process - High breakdown voltage : Vcg9>80V ( ): 2SA1683 Absolute Maximum Ratings at Ta= 25°C unit Collector to Base Voltage Vcso (—)100 Vv Collector to Emitter Voltage Vcro . (-)80 Vv Emitter to Base Voltage VEBO (-)5 Vv Collector Current Ic (-)500 mA Collector Current (Pulse) Iep (—)800 mA Base Current Ip (-)100 mA Collector Dissipation Po 300 mW Junction Temperature Tj 150 °C Storage Temperature Tstg —55to+150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector CutoffCurrent Icpo Ves=(—)60V,Ig=0 (-)0.1 pA Emitter Cutoff Current TgBo Vern=(—)4V,Ic=0 (-)0.1 pA DC Current Gain hpg(1) Voe=(—)5V,I¢=(-)50mA 100% 400% hpg(2) Vor=(—)5V,I¢=(—)400mA 60 Gain-Bandwidth Product fr Ver=(—)10V,I¢=(—)10mA. 120 MHz C-E Saturation Voltage Vorisat) Ic=(—)400mA,Ip=(—)40mA (—0.20)0.16 (—)0.5 Vv B-E Saturation Voltage VaEat) Ic=(—)400mA,Igp=(—)40mA (-)0.9 (—)1.2 Vv Output Capacitance Cob Vop=(—)10V,f=1MHz (15 pF C-B Breakdown Voltage Vigrcso Ic=(—)10pA,Ip=0 (—)100 Vv C-E Breakdown Voltage Visryceo Ic=(—)1mA,Rgg=@ (—)80 v E-B Breakdown Voltage Vipryeso Ie=(—)10pA,Ic=0 (-)5 Vv Turn-ON Time ton See specified Test Circuit. 50 ns Storage Time tetg * (500)650 ns Fall Time te ” (80)90 ns %: The 25A1683/2SC4414 are classified by 50mA hpgas follows: 109 _R 200 Switching Time Test Circuit INPUT = 7 OUTPUT Package Dimensions 2033 ; ewe. TA {) AL (unit: mm) pes1%. sot 2 an ry oe H+} | . § 220u | 470p) 7s rr) VBE=—5V vCC=20v 1? SS =—_T2 10IB1=—101B2=1¢=200mA Le e (For PNP, the polarity is reversed.) 3 Oe Unit(Resistance : 0 , Capacitance : F) Bi Base C: Collector E: Emitter SANYO: SPA SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 5189MO,TS No.8012-1/4
0 Ic — Vee 6x0 Ic — VCE
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7 Ic — VCE Ic — Voce
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60 Ic — VBE 600 Ic — VBE
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1000 FE — Ic hee — Ic
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5 Cob — Vos 4 Cob — VCB
| HT a ee ae Perera 2 2 10 PONTE ee pe Poo Ss ec Seer SS éTarh pese ob LEE AA iy AS Foes Tg 2 3 8 TH =100 rr to 2 3 35 7 @ Collector to Base Voltage,Vcy — V Collector to Base Voltage, Vg — V , SEE 3 Eee L + Ho A I 4 tH wo LL TT eT) Sooo Se aos | a se eens anes i i act fe PA a2 Eee Th 33 Ce ta ot LUT TPT LET 7“ Collier Currents mA “om ro * Collector Carnie ma * a0 $000 ——— 2 Felden 400 Po -~ Ta i as oe ae B wo | Veli elt NSA ob Jit T&T NANI Oe Boo 2 2m a APH ac ann q 3 10 ems l 4
2 TTT TTT UN Tg
° yf ty} ft 2 A yy py ea is) tig [Fer PNP, minus sign is mitted. aie 5 SPST S715 3 37% FST 2 0 2 4 6 © 10 12 40 160 Collector to Emitter Voltage,Vcz — V Ambient Temperature,Ta — °C No.3012-3/4
2SA1683/2$C4414 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. ™ Anyone purchasing any products described or contained herein for an above-mentioned use shall: © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO,, LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO. LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally, Wi information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.8012-4/4