2SC4413 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
Features
Adoption of FBET process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Small Cob. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 60 V Collector-emitter voltage V CEO 50 V Emitter-base voltage V EBO 15 V Collector current I C 100 mA Collector current(Pulse) I CP 200 mA Base current I B 20 mA Collector dissipation P C 150 mW Junction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current I CBO VCB = 40V, IE=0 0.1 ìA Emitter cutoff current I EBO VEB = 10V, IC=0 0.1 ìA DC current gain h FE VCE =5 V,I C = 10mA 800 1500 3200 Gain bandwidth product f T VCE = 10V , IC = 10mA 200 MHz Output capacitance C ob VCB = 10V, f = 1MHz 1.5 pF Collector-to-emitter saturation voltage V CE(sat) IC = 50mA , IB =1 m A 0 . 1 0 . 5 V Base-to-emitter saturation voltage V BE(sat) IC = 50mA , IB =1 m A 0 . 8 1 . 1 V Collector-to-base breakdown voltage V (BR)CBO IC = 10ìA , IE =0 6 0 V Collector-to-emitter breakdown voltage V(BR)CEO IC =1 m A,RBE = 50 V Emitter-to-base breakdown voltage V(BR)EBO IE = 10ìA , IC =0 1 5 V Marking Marking GY