2SC4412 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 1
Technical content
Features
High breakdown voltage. Small reverse transfer capacitance and excellent high frequency characteristic(Cre : 1.0pF typ). Excellent DC current gain ratio(hFE ratio : 0.95 typ). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 300 V Collector-emitter voltage V CEO 300 V Emitter-base voltage V EBO 5V Collector current I C 50 mA Collector current (pulse) I CP 100 mA Collector dissipation P C 250 mW Jumction temperature T j 150 Storage temperature T stg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current Ic BO VCB =2 0 0 V,IE =0 0 . 1 ì A Emitter cutoff current I EBO VEB =4 V,I C =0 0 . 1 ì A VCE =6 V,I C = 0.1 mA 100 320 VCE =6 V,I C =1 mA 100 Gain bandwidth product f T VCE =3 0 V,IC =1 0m A 7 0 M H z Output capacitance C ob VCB = 30V , f = 1MHz 1.5 pF Reverse transfer capacitance C re VCB = 30V , f = 1MHz 1.0 pF DC current gain ratio h FE ratio hFE1/ hFE20 . 9 5 Collector-emitter saturation voltage V CE(sat) IC =1 0 m A,IB =1 m A 1 . 0 V Base-emitter saturation voltage V BE(sat) IC =1 0 m A,IB =1 m A 1 . 0 V Collector-to-base breakdown voltage V (BR)CBO IC =1 0 ì A,IE =0 3 0 0 V Collector-to-emitter breakdown voltage V (BR)CEO IC =1 m A,RBE = 300 V Emitter-base breakdown voltage V (BR)EBO IE =1 0 ì A,IC =0 5 V DC current Gain h FE hFE Classification Marking Rank 4 5 hFE 100 200 160 320 QT