2SC4411 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

Features

  • High fp (fp= 1.2GHz typ). + High breakdown voltage (Vcgo = 100V,Vcoro =80V). + Large current (Ic =500mA). - Small reverse transfer capacitance (Cre=3.8pF/Vcp=30V). - - Adoption of FBET process. Absolute Maximum Ratings at Ta= 25°C. unit Collector-toBase Voltage Vcso 100 v Collector-to-Emitter Voltage Voro 80 v Emitter-to-Base Voltage Veso 3 Vv Collector Current Ic 500 mA Collector Current (Pulse) Iop 1.0 A Collector Dissipation Po 175 W Te=25°C 15 oW Junction Temperature Tj 150 °C Storage Temperature Tstg —55 to +150 °C Electrical Characteristics at Ta = 25°C min typ max unit Collector Cutoff Current logo Vop=80V,Ig=0 0.1 yA Emitter Cutoff Current IgBo Vep=2V,Ico=0 5.0 pA DC Current Gain hrg(1) = Vog=10V,I¢ =50mA 30 200 hpp(2) Vog=10V,I¢=500mA 20 Gain-Bandwidth Product fp Vog=10V,Ig=100mA 1.2 GHz Output Capacitance Cob Vop=30V,f=1MHz 4.4 pF Reverse Transfer Capacitance Cre Vop=30V,f=1MHz 3.8 pF C-E Saturation Voltage Vexisat) Ico=300mA,Ip=30mA 0.6 v B-E Saturation Voltage Vexcat) I¢=300mA,Ig=30mA 12 =v C-B Breakdown Voltage Vesrycso Ic=104A,Ig=0 100 Vv C-E Breakdown Voltage Voprycro Ic=1mA,Rge= 80 Vv E-B Breakdown Voltage VBReso Ig=100hA,Io=0 3 Vv Package Dimensions 2010C unit : mm) . x al ane 7 _ rma . : 93.6 2.2 L086 1; Base 3 ij jeje tr 2: Collector 4 3: Emitter 7 2] gepec: To-220R8 EIAJ : SC-46 ‘ SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 41694TH (KOTO) 8-5527 No.3790-1/3

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Ambient Temperature, Ta — °C Case Temperature,Te — °C HENo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehioles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. @ Anyone purchasing any products described or contained herein for an above-mentioned use shall: © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors and all their officers and employess, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. ; Hi Information (including circuit diagrams and circuit parameters) herein is for example only: it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. : a : : No.3790-3/3