2SC4406 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Features

+ High cutofffrequency : fy = 1.2GHz typ + High power gain : PG=15dB typ (f= 0.4GHz) + Good dependence of fy on current + Very small-sized package permitting 25C4406-applied sets to be made smaller and slimmer Absolute Maximum Ratings at Ta = 25°C unit Collector to Base Voltage Vcso 30 Vv Collector to Emitter Voltage VcEo 15 Vv Emitter to Base Voltage VEBO 3 Vv Collector Current Ig 50 mA Collector Dissipation Po 150 mW Junction Temperature Tj 150 °C Storage Temperature Tstg —55to+150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current IcBo Vop=15V,Ig=0 01 pA Emitter Cutoff Current IzBo Vep=2V,Ic=0 1 pA DC Current Gain hre Vor=10V JIco=5mA «40 %*200 Gain-Bandwidth Product fy Voe=10V,Ic=10mA 0.6 1.2 GHz Output Capacitance Cob Vep=10V,f=1MHz 0.75 11 pF Reverse Transfer Capacitance Cre Vop=10V,f=1MHz 0.5 pF Power Gain PG Vog=10V,Ic=10mA,f=0.4GHz 15 dB Noise Figure NF Voe=10V,I¢=3mA,f=0.4GHz 2.0 dB See specified Test Circuit. > The 25C4406 is classified by 5mA hpg as follows: 40 2 80 60 3 120 100 4 200 Package Dimensions 2059 (Note) Marking: JT {unit : mm) hpg rank : 2,3,4 eg lor CP package version, use the 25C4269. 0.15 i

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25C4406 , eee PG,NF Test Circuit a ! ? ve O¥ce, ' S cH ri H iN 2 a ee | Unit (Resistance: 2) : Cl ~20pF C2 ~10pF C3 ~10pF C4 ~20pF C5 ~30pF Li 29,1=40mm 2/3t L2 29,1=40mm 2/3t L3 19,1=40mm 1/2t

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on pr | ol 10 10 10 10 10 100 Collector to Base Voltage, Vp - V Collector Current,lg — mA NF = Ic Po - Ti i Q WV | 4 g£ S ‘ F Varn : 2 2 | an z “| \\ PEt iy 3 t) | ol 10 10 1 0 20 wo 60 80 10 1 160 Collector Current, — mA * Ambient Temperature,Ta — °C a No.2759-3/4

Stte:Vc_e= 10V Si2e : Vee = 10V f=200MHz step f=200MHz step 1.2GHz i 90° , 120, cae, 105, | 2 yeni Liye 1.2GHz X\\ 3 eee ERS . aan KSINR. ve Bf fe i\\ LPS EOXS LA fue sa {9 LY HOOKS N LOPES HIRES > , SY ; Levy SPECS Ae opr Pop ox f.; LH ASR SOAT ps ne SORRY <a SEE 7 ait ot SOE Oe S2ie: Vee = 10V $22e: Vee = 10V £=200MHz step f=200MHz step 0° 4 1202 aaa, 0° u SSAC ak TI ISEIRE ON SEN: BIO eh (~ Ny LHP PIN UA te" LOS POT, 0 z pq 5, 0.26h2 SIR CS, SEEA SKIS Ys (So SEAS L] 102 12che rj SEM <So OLE ESOP [ SEES a

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INo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. MH Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO. LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. W Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third. parties. No.2759-4/4