2SC4390 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
Adoption of MBIT process. High DC current gain (hFE=800 to 3200). Large current capacity (IC=2A). Low collector-to-emitter saturation voltage (VCE(sat) 0.3V). High VEBO (VEBO 15V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 20 V Collector-emitter voltage V CEO 10 V Emitter-base voltage V EBO 15 V Collector current I C 2A Collector current (pulse) I CP 4A Base current I B 0.4 A Collector dissipation P C 500 mW Junction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0
www.kexin.com.cn 2SC4390 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current I CBO VCB = 15V, IE=0 0.1 ìA Emitter cutoff current I EBO VEB = 10V, IC=0 0.1 ìA DC current gain h FE VCE =2V , IC = 500mA 800 1500 3200 Gain bandwidth product f T VCE = 10V , IC = 50mA 260 MHz Output capacitance C ob VCB = 10V , f = 1.0MHz 280 pF Collector-emitter saturation voltage V CE(sat) IC =1A,I B = 20mA 0.11 0.5 V Base-emitter saturation voltage V BE(sat) IC =1A,I B = 20mA 0.87 1.2 V Collector-base breakdown voltage V (BR)CBO IC = 10ìA , IE =0 2 0 V Collector-emitter breakdown voltage V (BR)CEO IC =1 m A,RBE = 10 V Emitter-base breakdown voltage V (BR)EBO IE = 10ìA , IC =0 1 5 V Turn-on time t on 0.13 ìs Storage time t stg 0.8 ìs Fall time t f 0.1 ìs