2SC4385 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4385 DESCRIPTION ·
- With TO-3PML package
- Complement to type 2SA1670
APPLICATIONS
- Audio and general purpose PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 6 A IB Base current 3 A PC Collector power dissipation T C=25℃ 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3PML) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4385 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=50mA; IB=0 80 V V(BR)EBO Emitter-base breakdown voltage I E=1mA; IC=0 6 V VCEsat Collector-emitter saturation voltage I C=2 A;IB=0.2 A 1.5 V ICBO Collector cut-off current V CB=120V; IE=0 10 μA IEBO Emitter cut-off current V EB=6V; IC=0 10 μA hFE DC current gain I C=2A ; VCE=4V 50 180 fT Transition frequency I E=-0.5A ; VCE=12V 20 MHz hFE classifications O P Y 50-100 70-140 90-180
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4385 PACKAGE OUTLINE Fig.2 Outline dimensions