2SC4373_15 KEXIN

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  • Manufacturer or author: Provided By digicamel.com
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Technical content

www.kexin.com.cn 1 Tran sistors NPN Transistors 2SC4373 ■ Features

  • Collector Current Capability IC=800mA
  • Collector Emitter Voltage VCEO=120V 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 800 mA Collector Power Dissipation PC 500 mW Thermal Resistance From Junction To Ambient RθJA 250 ℃/W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 1 mA， IE= 0 120 Collector- emitter breakdown voltage VCEO Ic= 10 mA， IB= 0 120 Emitter - base breakdown voltage VEBO IE= 1 mA， IC= 0 5 Collector-base cut-off current ICBO VCB= 120 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB=50mA 1 Base - emitter saturation voltage VBE(sat) IC=500 mA, IB=50mA 1.2 Base - emitter voltage VBE VCE= 5V, IC= 500mA 1 DC current gain hFE VCE= 5V, IC= 100mA 80 240 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 30 pF Transition frequency fT VCE= 5V, IC= 0.5 A 120 MHz V uA V ■ Classification of hfe Type 2SC4373-O 2SC4373-Y Range 80-160 120-240 Marking CO CY

www.kexin.com.cn2 Transistors NPN Transistors 2SC4373 ■ Typical Characterisitics 0111.0 100 1000 0 25 50 75 100 125 150 100 200 300 400 500 600 001011 200 400 600 800 1000 001011 100 001011 100 1000 0 2 4 6 8 100 150 200 250 300 350 200 400 600 800 1000 100 Cob Cib f=1MHz IE=0/IC=0 Ta=25 ℃ VCB/VEBCob/Cib —— CAPACITANCE C (pF) REVERSE VOLTAGE V (V) COLLECTOR POWER DISSIPATION PC (mW) AMBIENT TEMPERATURE Ta ( )℃ PC —— Ta Static Characteristic 800 IChFE —— β=10 Ta=100 ℃ Ta=25℃ ICVBEsat —— COLLECTOR CURRENT IC (mA) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 800 400 800 β=10 Ta=100 ℃ Ta=25℃ ICVCEsat —— COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) Ta=100℃ Ta=25℃ COMMON EMITTER VCE=5V COLLECTOR CURRENT IC (mA) DC CURRENT GAIN hFE 800 COMMON EMITTER Ta=25℃ COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) 2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA IB=0.2mA BASE-EMMITER VOLTAGE VBE (mV) COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE=5V Ta=100 ℃ Ta V BE I C