2SC4365 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 5
Technical content
Features
+ Low-voltage operation: fp=3.0GHz typ (Vcp=3V) : MAG=12dB typ (Vcg=3V,I¢=10mA) :NF=1.5dB typ (Vcg=3V,Ic¢=5mA) Absolute Maximum Ratings at Ta= 25°C unit Collector to Base Voltage Vogo 25 v Collector to Emitter Voltage VcEro 15 v Emitter to Base Voltage VeBo 3 Vv Collector Current Ic 50 mA Collector Dissipation Pe 250 mW Junction Temperature Tj 150 °C Storage Temperature Tstg —55 to +150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current IcBo Vop=15V,Ig=0 1.0 pA Emitter Cutoff Current lEBo Vep=1V,Ic=0 10 pA DC Current Gain hrg Voe=38V,Ic=10mA 40% 200 Gain-Bandwidth Product fp Vog=3V,Ic=10mA 3.0 GHz Output Capacitance Cob Vop=3V,f=1MHz 0.9 #15 pF Reverse Transfer Capacitance Cre Vop=8V,f=1MHz 0.85 pF Forward Transfer Gain IS2le!? Vop=3V,Io=10mA,f= 0.9GHz 7 dB Maximum Available PowerGain MAG Voer=3V,Ic=10mA,f=0.9GHz 12 dB Noise Figure NF Vor=3V,Ic=5mA f= 0.9GHz 15 3.0 dB %* The 2SC4365 is classified by 10mA hpg as follows: 40 2 80 100 4 200 (Note) Marking: PT hpg rank : 2,3,4 Package Dimensions 2018A (unit : mm) iT : mn on a G 4 [es [ress C: Collector B: Base wo H04 SANYO: CP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 6069MO,TS No.3007-1/5
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28C4365 * 5 a 8 : Es a ilian Simran Lat 3 SOIT PAC ALE TE Ty) LP > 7 2 3 5 2.3 3 57 1.0 203 5.7 10 2 3 5 +o Collector Currentyig — mA Collector Current, — mA
12 PG, NF —Vcp 300 Po - Ta
el J. iT) REIN TT 7 Ne wR td ao _— TT 8 ima 14 wt | 60 80 4100 120 moe 160 Collector to Base Voltage,Vcp — V Ambient Temperaturo,Ta — °C Sie: Woon aV size: vee= 3V f=100Mez, 200~1200MH2(200Miz step) f=100MHz, 200~1200MH2<200MHz step) wo / ve [J «* i Acre x ASS CSS. LOB EES jo2 PA's LTO SPOONS \\ (ELSA £180" ities” Coeteaa ° -102 x es 4 SSSA. so ONG SEES CN EEE No.8007-3/5
28C4365 . a S2te: Vce=3V S22e: Vce=3V f=100MHz, 200~1200MH2(200MHz step) f=100MHz, 200~1200MH2(200MHz step) 90° " 120°, a a Cam SEES jos | o' , wo SEES ART RD w SN LIMES Nw SOS PRET EUEOSA\\\\ [FOC swe LLDPE RSS| ° Pata ea || CEL SARS SE 2 | | | \\ 4 Dima SHI SLT ; PAY QoSXK Seo 402 ok EERO [" OOP > Perrys “108 po ce ae ne a <i S parameter (Common emitter) Vce=3V, Ic= mA, Zo=502 Vee= 3V, Ic=20mMA, Zo=502 a No.3007-4/5
I No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Ml Anyone purchasing any products described or contained herein for an above-mentioned use. shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO,, LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. W Information (including circuit diagrams and cirouit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.3007-5/5