2SC4296 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4296
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO= 400V(Min)
- High Switching Speed
APPLICATIONS
- Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T a=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 4 A PC Collector Power Dissipation @TC=25℃ 75 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4296
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 1.3 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 100 μA hFE DC Current Gain IC= 6A; VCE= 4V 10 30 COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 85 pF fT Current-Gain—Bandwidth Product IE= -0.7A; VCE= 12V 10 MHz Switching Times ton Turn-On Time 1.0 μs tstg Storage Time 3.0 μs tf Fall Time IC= 6A; IB1= 0.6A; IB2= -1.2A; VCC= 200V; RL= 33Ω 0.5 μs isc Website：www.iscsemi.cn 2