2SC4293 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
+ High speed (te= 300ns max) - High breakdown voltage (Vopo = 1500V) - High reliability (adoption of HVP process) + Adoption of MBIT process - On-chip damper diode Absolute Maximum Ratings at Ta= 25°C unit Collector to Base Voltage Veso 1500 v Collector to Emitter Voltage VcEO 800 Vv Emitter to Base Voltage VEBO 7 v Collector Current Ic 5 A Peak Collector Current iep 16 A Collector Dissipation Po 3.0 WwW Te= 25°C 50 W Junction Temperature ‘Tj 150 °C Storage Temperature Tstg —55to+150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Icgs Vog=1500V 1 mA Collector Cutoff Current Icgo Vep=800V 10 pA Collector Sustain Voltage Vceoisus) 1Ic=100mA,Ig=0 800 v Emitter Cutoff Current Igpo Vep=4V 40 130 mA C-E Saturation Voltage Vexisat) Ic=4A,Ip=1A 5 v B-E Saturation Voltage Verieat) Ic=4A,Jp=1A 15 =~ DC Current Gain hpg (1) Vcr=5V,Io=1A 8 hp (2) Vog=5V,Ic=4A 4 6 Diode Forward Voltage Vp Igc=5A 2.0 Vv Storage Time tetg Voc=200V,I¢=4A, 3.0 ps Fall Time te Jp] =0.8A,Ipo=—1.6A 0.3 BS Switching Time Test Circuit —Ie2 ? (unit: mm ) ln >, 22.0 De iweuT RB me 0 fee as 0 35 aa he RL Tre 1, PW=20,s00 ‘| Tre PtH pete 18 100p | 47: 1 P Fe 4,0 4 6 21.6 E: Emitter Vee=—5V Voo™=200V C: Collector Unit (resistance: 9, capacitance: F) ‘po th Br Base SANYO: TO3PML SANYO Electric Co.,Ltd. Semiconductor Business Headquarters : . TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN ° DO88TA,TS No.2963-1/3
Ic — Vce hre — Ic ‘ Lol | [viv TTT Ty ty eS ee || rit Ty yt. ee ee ee oo ae N ee ee 2 a NN Bs PAT ING Ea Oo > Collector to Emitter Voltage,Vcg — V Collector Current,Ig - A 510 a ‘ Ic — VBE Voe= 5V eo ee PES 2 | } Pe eft TTT THT) eT 7] | PSS | i it Fi LT ee aii{ Witty ATT) 3, , RNA COC seers Da E CE % 02 04 A1, 46 1.0 12 2 ° Collector Currentylg — A Base to Emitter Voltage, Vas - V oO Switching Time — Ic 10 Switching Time ~ ig2 ee a Pt ft tye Pt te — or a? | eC CeE TT Pe i SOOO p eestor et —rreree eee, JON a ii 4 BTCC © oypler—~ 2 an © oaLte=0. Se 2 tame ++ >—+- +--+) hie a “ Collector Currente -A ° a Base Current,[gp — A Forward Bias A S O Reverse Bias A S O a 7] yt | ft | 7 y] BSR GREER Co ! TAIN INES Pt PCCOOPSO NEN RS eet NNEC [| 8 poorer 6S TUT UT TT TIN § Cee ee Oa e7rr Terry yey ieee EEN Ree Co = a Ne “T Si Pte i Singlepale rt} Collector to Emitter Voltage, Vcg - V Collector to Emitter Voltage, Von — V “No.2963-2/3
Pc - Ta Pc ~ Ta ow tT TT TT) TTT TT TT z NI = 50 bt} PE IN ET TT g NJ & ad IN a” Ns SEEDER Ba g ae, 2s N . B % cat tT PINT: * % 5 20 3 10 N 5 CCCCCeN | “TO | “TTT NY ttf iti iINy -, N om 6 © OD 0 DM W ob © & © MW WM Ww THO Ambient Temperature,Ta — °C Ambient Temperature,Ta ~ °C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. @ Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD, its affiliates, subsidiaries and distributors or any of . their officers and employees jointly or severally. Ml Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, eee No.2963-3/3