2SC4293 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc Website：www.iscsemi.cn isc Silicon NPN Power Transistor 2SC4293
DESCRIPTION
- High Breakdown Voltage- : V (BR)CBO = 1500V(Min)
- High Switching Speed
- High Reliability
- Built-in Damper Diode
APPLICATIONS
- Ultrahigh-definition color display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T a =25 SYMBOL PARAMETER VALUE UNIT V CBO Collector-Base V oltage 1500 V V CEO Collector-Emitter V oltage 800 V V EBO Emitter-Base Voltage 7 V I C Collector Current-Continuous 5 A I CP Collector Current-Peak 16 A P C Collector Power Dissipation @ T a =25℃ 3.0 W Collector Power Dissipation @ T C =25℃ 50 T J Junction Temperature 150 ℃ T stg Storage Temperature Range -55~150
isc Website：www.iscsemi.cn isc Silicon NPN Power Transistor 2SC4293
ELECTRICAL CHARACTERISTICS
T C =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP . MAX UNIT V CEO(SUS) Collector-Emitter Sustaining Voltage I C = 0.1A; I B = 0 800 V V CE( sat Collector-Emitter Saturation Voltage I C = 4A; I B = 1A 5.0 V V BE( sat Base-Emitter Saturation Voltage I C = 4A; I B = 1A 1.5 V I CBO Collector Cutoff Current V CB = 800V; I E = 0 10 μA I CES Collector Cutoff Current V CE = 1500V; R BE = 0 1.0 mA I EBO Emitter Cutoff Current V EB = 4V; I C = 0 40 130 mA h FE-1 DC current gain I C = 1A; V CE = 5V 8 h FE-2 DC current gain I C = 4A; V CE = 5V 4 6 V ECF C-E Diode Forward Voltage I F = 5A 2.0 V Switching times t stg Storage Time I C = 4A, I = 0.8A; I = -1.6A; V CC = 200V 3.0 μs t f Fall Time 0.3 μs