2SC4292 SANYO
Document overview
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Technical content
Features
+ High speed (t,=300ns typ.) . High breakdown voltage (Vogo= 1500V) - High reliability (adoption of HVP process) + Adoption of MBIT process « On-chip damper diode Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage Vepo 1500 Vv Collector to Emitter Voltage Vero 800 Vv Emitter to Base Voltage Vepo 7 OV Collector Current Ig. 6 oA Peak Collector Current icp 16 0A Collector Dissipation Po 100 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Togs Vop=1500V 1.0 mA Collector Cutoff Current Icpo Vep=800V 10 uA Collector Sustain Voltage Vogo (sus) Ic=100mA ,Ip=0 800 Vv Emitter Cutoff Current Ing Vppz4v 40 130 mA Collector to Emitter Veptsat) Ip=5A,Ip=1.2A 5 Vv Saturation Voltage Base to Emitter Vpp (sat) Igs5A,Ip=1-2A 1.5 Vv Saturation Voltage DC Current Gain hpp(1) Vog=5V,I¢=1.0A 8 hpp(2) — Vog=5V,I¢=5A 4 6 Diode Forward Voltage Ve Tgc=6A 2.0 Vv Storage. Time tstg Ig¢=5A,Ip y= 1A, Ipo=-2A 3.0 us Fall Time tf T9=5A,1p4=1A,Ig5=-2A 0.3 us Switching Time Test Circuit Case Outline 55 (sues caput (unit: mm) er] cal ue 1 Lo @ @ op ayy Elis « Hi F852 u see wk i i ne a ria weve i aa fa | Specifications and information herein are subject to change without notice. . “22: SANYO Electric Co.,Ltd. Semiconductor Overseas Marketing Div. vad - +" 2 >). Natsume Bldg.,:: 18-6, 2-chome, Yushima, Bunkyo-ku, TOKYO 113 JAPAN..°":”- D227AT.TS 2SC4292-1/9