2SC4275 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4275
DESCRIPTION
- High Collector-Emitter Breakdown Voltage- : V (BR)CEO= 400V(Min)
- High Switching Speed
- High Reliability
- Low Collector Saturation Voltage
APPLICATIONS
- Switching regulators
- DC-DC converter
- Solid state relay
- General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T a=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 10 V IC Collector Current-Continuous 10 A IB B Base Current-Continuous 3 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4275
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; IB= 0 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 0.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.2 V ICBO Collector Cutoff Current VCB= 450V ; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 0.1 mA hFE DC Current Gain IC= 1A ; VCE= 5V 25 65 Switching times ton Turn-on Time 1.0 μs tstg Storage Time 2.5 μs tf Fall Time IC= 5A , IB1= 0.5A; IB2= -1A RL= 30Ω; PW=20μs; Duty Cycle≤2% 0.5 μs isc Website：www.iscsemi.cn 2